| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An evaluation of conventional and LDD devices for submicron geometries
|
Mountain, David J.
|
|
1990
|
33 |
5 |
p. 565-570
6 p.
|
article
|
| 2 |
A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction
|
Deen, M.J.
|
|
1990
|
33 |
5 |
p. 503-511
9 p.
|
article
|
| 3 |
A two-dimensional analytical solution of the poisson and current continuity equations for the short-channel MOSFET
|
Kendall, J.D.
|
|
1990
|
33 |
5 |
p. 537-551
15 p.
|
article
|
| 4 |
Characterization of bipolar devices by steady state and modulated electroluminescence
|
Misiakos, K.
|
|
1990
|
33 |
5 |
p. 561-563
3 p.
|
article
|
| 5 |
Closed-form analytical solutions for the breakdown voltage of planar junctions terminated with a single floating field ring
|
Baliga, B.Jayant
|
|
1990
|
33 |
5 |
p. 485-488
4 p.
|
article
|
| 6 |
Comments on the use of the surface recombination velocity concept
|
Correig, X.
|
|
1990
|
33 |
5 |
p. 477-484
8 p.
|
article
|
| 7 |
Edge effects in Schottky diodes
|
Willis, A.J.
|
|
1990
|
33 |
5 |
p. 531-536
6 p.
|
article
|
| 8 |
Editorial — Software survey section
|
|
|
1990
|
33 |
5 |
p. I-III
nvt p.
|
article
|
| 9 |
Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2
|
Kalnitsky, A.
|
|
1990
|
33 |
5 |
p. 523-530
8 p.
|
article
|
| 10 |
MOS device parameter optimization based on transient trajectory considerations
|
Wu, Chung-Yu
|
|
1990
|
33 |
5 |
p. 489-495
7 p.
|
article
|
| 11 |
1 ƒ noise measurements on HgCdTe field-effect transistors
|
Çelik-Butler, Z.
|
|
1990
|
33 |
5 |
p. 585-590
6 p.
|
article
|
| 12 |
On the determination of the defect parameters of repulsive centers by deep level transient spectroscopy
|
Huylebroeck, G.
|
|
1990
|
33 |
5 |
p. 579-583
5 p.
|
article
|
| 13 |
Small-signal parameters and thermal noise of the four-terminal MOSFET in non-quasistatic operation
|
Pu, Lih-Jiuan
|
|
1990
|
33 |
5 |
p. 513-521
9 p.
|
article
|
| 14 |
Thermal failure in semiconductor devices
|
Dwyer, V.M.
|
|
1990
|
33 |
5 |
p. 553-560
8 p.
|
article
|
| 15 |
Two-dimensional analysis of latch-up phenomena in latch-up-free self-aligned IGBT structures
|
Koh, Yo-Hwan
|
|
1990
|
33 |
5 |
p. 497-501
5 p.
|
article
|
| 16 |
WSi x refractory gate metal process for GaAs MESFETs
|
Willer, J.
|
|
1990
|
33 |
5 |
p. 571-577
7 p.
|
article
|
Journal description