| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for the kink in nMOSTs operating at Liquid Helium Temperatures (LHT)
|
Simoen, E.
|
|
1990
|
33 |
4 |
p. 445-454
10 p.
|
artikel
|
| 2 |
An analytical model for a.c. transport in double-barrier heterojunction diodes
|
Le Coz, Y.L.
|
|
1990
|
33 |
4 |
p. 401-405
5 p.
|
artikel
|
| 3 |
An analytical model of punchthrough voltage of short-channel MOSFETs with nonuniformly doped channels
|
Das Gupta, A.
|
|
1990
|
33 |
4 |
p. 395-400
6 p.
|
artikel
|
| 4 |
A new mathematical model for semiconductor-on-insulator structures
|
Lai, P.T.
|
|
1990
|
33 |
4 |
p. 441-444
4 p.
|
artikel
|
| 5 |
A power semiconductor diode with an integrated reverse-voltage sensor
|
Mânduţeanu, George V.
|
|
1990
|
33 |
4 |
p. 391-394
4 p.
|
artikel
|
| 6 |
Application of the iteration approach to the ensemble Monte Carlo technique
|
Nedjalkov, M.
|
|
1990
|
33 |
4 |
p. 407-410
4 p.
|
artikel
|
| 7 |
Calculation of temporal response of field-assited transmission-mode GaAs NEA photocathodes
|
Guo, Lihui
|
|
1990
|
33 |
4 |
p. 435-439
5 p.
|
artikel
|
| 8 |
Editorial - software survey section
|
|
|
1990
|
33 |
4 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Fabrication of sub-micrometer PMOSFETs with sub-100 nm p +-n shallow junctions using group III dual ion implantation
|
Lin, C.-M.
|
|
1990
|
33 |
4 |
p. 472-474
3 p.
|
artikel
|
| 10 |
Hysteresis loop observed in temperature dependence of resistivities by SnO2-based gas sensors
|
Kanefusa, Shinji
|
|
1990
|
33 |
4 |
p. 467-469
3 p.
|
artikel
|
| 11 |
Improvement of crystallization of glow-discharge-deposited a-Si:H by doping with arsenic
|
Yokota, Katsuhiro
|
|
1990
|
33 |
4 |
p. 470-471
2 p.
|
artikel
|
| 12 |
Measurement of minority carrier lifetime of solar cells using surface voltage and current transients
|
Vishnoi, Arti
|
|
1990
|
33 |
4 |
p. 411-417
7 p.
|
artikel
|
| 13 |
Simplification of the ICCG method for matrix inversion in semiconductor device simulation
|
Guo, S.F.
|
|
1990
|
33 |
4 |
p. 475-476
2 p.
|
artikel
|
| 14 |
The influence of isolation technique on MOS transistor characteristics, measurements and simulations
|
Voss, H.J.
|
|
1990
|
33 |
4 |
p. 419-425
7 p.
|
artikel
|
| 15 |
Theory of injected current behavior associated with blocked impurity-band-conduction
|
Martin, B.G.
|
|
1990
|
33 |
4 |
p. 427-433
7 p.
|
artikel
|
| 16 |
The validity of Ramo's theorem
|
De Visschere, P.
|
|
1990
|
33 |
4 |
p. 455-459
5 p.
|
artikel
|
| 17 |
Threshold switching transient in metal/a-Si:H/c-Si(p-n) (MASS) heterojunction device
|
Chen, Yu-Wen
|
|
1990
|
33 |
4 |
p. 461-465
5 p.
|
artikel
|
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