nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An analytical model for the MISIS structure in SOI MOS devices
|
Tack, M. |
|
1990 |
33 |
3 |
p. 357-364 8 p. |
artikel |
2 |
A numerical analysis of the resonant states of quantum well and superlattice devices
|
Brown, H.K. |
|
1990 |
33 |
3 |
p. 333-337 5 p. |
artikel |
3 |
A static induction transistor with insulator cover-gate and with triode-like I-V characteristics
|
Li, S.Y. |
|
1990 |
33 |
3 |
p. 345-349 5 p. |
artikel |
4 |
Dependence of current gain β on spacer geometry and emitter size in polysilicon self-aligned bipolar transistors
|
Miura-Mattausch, M. |
|
1990 |
33 |
3 |
p. 325-331 7 p. |
artikel |
5 |
Emitter region delay time of AlGaAs/GaAs heterojunction bipolar transistors
|
Gao, Guang-Bo |
|
1990 |
33 |
3 |
p. 389-390 2 p. |
artikel |
6 |
High voltage power MOSFETs with a trench-gate structure
|
Chang, H.-R. |
|
1990 |
33 |
3 |
p. 381-386 6 p. |
artikel |
7 |
Influence of doping dependent bandgap grading on electrical performance and design criteria of npn AlzGa1−zAs/GaAs abrupt heterojunction bipolar transistors
|
Mohammad, S.Noor |
|
1990 |
33 |
3 |
p. 339-344 6 p. |
artikel |
8 |
Mercury cadmium telluride longwavelength photoconductors operating at 200–300 K
|
Niedziela, T. |
|
1990 |
33 |
3 |
p. 351-355 5 p. |
artikel |
9 |
Modified lumped series resistance model of solar cells under shadow conditions
|
Sharma, A.K. |
|
1990 |
33 |
3 |
p. 309-312 4 p. |
artikel |
10 |
On periodic concentration distributions of a semiconductor plasma
|
Gorbatyuk, A.V. |
|
1990 |
33 |
3 |
p. 387-388 2 p. |
artikel |
11 |
Polyimide-passivated pn diodes
|
Ang, S.S. |
|
1990 |
33 |
3 |
p. 375-379 5 p. |
artikel |
12 |
Software survey section
|
|
|
1990 |
33 |
3 |
p. I-IV nvt p. |
artikel |
13 |
The effect of gate electrodes using tungsten silicides and/or poly-silicon on the dielectric characteristics of very thin oxides
|
Cheng, H.C. |
|
1990 |
33 |
3 |
p. 365-373 9 p. |
artikel |
14 |
The effects of emitter-shorts on plasma propagation in thyristors
|
Zekry, Abdelhalim |
|
1990 |
33 |
3 |
p. 313-324 12 p. |
artikel |