| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of energy states in modulation doped multiquantum well heterostructures
|
Ji, G.
|
|
1990
|
33 |
2 |
p. 247-258
12 p.
|
artikel
|
| 2 |
Analysis of the effect of a uniform base drift field on the performance of a polycrystalline p/n junction solar cell
|
Elnahawy, S.
|
|
1990
|
33 |
2 |
p. 169-176
8 p.
|
artikel
|
| 3 |
An analytical model for the capacitances in short-channel MOSFETs
|
Gharabagi, R.
|
|
1990
|
33 |
2 |
p. 235-241
7 p.
|
artikel
|
| 4 |
A new algorithm for steady-state 2-D numerical simulation of MOSFETs
|
Perng, Ruey-Kuen
|
|
1990
|
33 |
2 |
p. 287-293
7 p.
|
artikel
|
| 5 |
A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions
|
Hayama, H.
|
|
1990
|
33 |
2 |
p. 279-286
8 p.
|
artikel
|
| 6 |
Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprisong rechargeable traps
|
Beister, G.
|
|
1990
|
33 |
2 |
p. 227-233
7 p.
|
artikel
|
| 7 |
Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors
|
Reisch, M.
|
|
1990
|
33 |
2 |
p. 189-197
9 p.
|
artikel
|
| 8 |
Editorial - software survey section
|
|
|
1990
|
33 |
2 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
|
Chin, Vincent W.L.
|
|
1990
|
33 |
2 |
p. 299-308
10 p.
|
artikel
|
| 10 |
Fundamental modelling of the turn-off behaviour of power bipolar transistors
|
Johnson, M.K.
|
|
1990
|
33 |
2 |
p. 259-272
14 p.
|
artikel
|
| 11 |
Gate width effects on deep level spectra in implanted GaAs MESFETs on LEC substrates
|
Bernal, D.
|
|
1990
|
33 |
2 |
p. 243-246
4 p.
|
artikel
|
| 12 |
Interface conditions for the boltzmann equation and derived transport models at heterojunctions in non-equilibrium
|
Schroeder, D.
|
|
1990
|
33 |
2 |
p. 217-221
5 p.
|
artikel
|
| 13 |
Models and experiments on degradation of oxidized silicon
|
Sah, C.T.
|
|
1990
|
33 |
2 |
p. 147-167
21 p.
|
artikel
|
| 14 |
Numerical simulation of the vertical Kelvin test structure for specific contact resistivity
|
Leu, Len-Yi
|
|
1990
|
33 |
2 |
p. 177-188
12 p.
|
artikel
|
| 15 |
Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors
|
Karlsteen, M.
|
|
1990
|
33 |
2 |
p. 199-204
6 p.
|
artikel
|
| 16 |
Performance optimization of thin-gate-oxide MOSFETs
|
Nagai, Kiyoko
|
|
1990
|
33 |
2 |
p. 223-226
4 p.
|
artikel
|
| 17 |
Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects
|
Rauh, H.
|
|
1990
|
33 |
2 |
p. 205-215
11 p.
|
artikel
|
| 18 |
Schottky barrier contacts on (p)-Ga0.47In0.53As
|
Malacký, Ľ.
|
|
1990
|
33 |
2 |
p. 273-278
6 p.
|
artikel
|
| 19 |
Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
|
Nolte, D.D.
|
|
1990
|
33 |
2 |
p. 295-298
4 p.
|
artikel
|
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