| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A current transport model which includes effects of lattice heating
|
Amaratunga, Gehan
|
|
1990
|
33 |
11 |
p. 1343-1346
4 p.
|
artikel
|
| 2 |
Alpha-particle-induced charge collection in scaled dram cells with advanced structures
|
Takeuchi, K.
|
|
1990
|
33 |
11 |
p. 1477-1483
7 p.
|
artikel
|
| 3 |
An accurate calculation of the d.c. electrical and thermal characteristics of GaAs transferred-electron devices
|
Batchelor, A.R.
|
|
1990
|
33 |
11 |
p. 1485-1491
7 p.
|
artikel
|
| 4 |
A study of the Au/Al/BiSrCaCuO contact system
|
Lin, W.T.
|
|
1990
|
33 |
11 |
p. 1455-1458
4 p.
|
artikel
|
| 5 |
Call for papers
|
|
|
1990
|
33 |
11 |
p. I-
1 p.
|
artikel
|
| 6 |
d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures
|
Brockerhoff, W.
|
|
1990
|
33 |
11 |
p. 1393-1400
8 p.
|
artikel
|
| 7 |
Editorial — software survey section
|
|
|
1990
|
33 |
11 |
p. III-V
nvt p.
|
artikel
|
| 8 |
Electron-polariton interactions in submicron semiconductor structures
|
Burtyka, M.V.
|
|
1990
|
33 |
11 |
p. 1339-1341
3 p.
|
artikel
|
| 9 |
Evidence that burst noise is a multi-step phenomenon
|
Knott, K.F.
|
|
1990
|
33 |
11 |
p. 1347-1353
7 p.
|
artikel
|
| 10 |
Experimental study of acoustoelectric interaction in Hg1-x Cd xTe/CdTe
|
Tabib-Azar, M.
|
|
1990
|
33 |
11 |
p. 1359-1365
7 p.
|
artikel
|
| 11 |
Modelling the inductive behaviour of short-base p-n junction diodes at high forward bias
|
van den Biesen, J.J.H.
|
|
1990
|
33 |
11 |
p. 1471-1476
6 p.
|
artikel
|
| 12 |
Optical generation and radiative recombination parameters for energy models of carrier transport in direct gap semiconductors
|
McAndrew, C.C.
|
|
1990
|
33 |
11 |
p. 1367-1375
9 p.
|
artikel
|
| 13 |
Optical generation and radiative recombination parameters for energy models of carrier transport in indirect gap semiconductors
|
McAndrew, C.C.
|
|
1990
|
33 |
11 |
p. 1377-1386
10 p.
|
artikel
|
| 14 |
Oxide implantation for threshold voltage control
|
Zappe, Hans P.
|
|
1990
|
33 |
11 |
p. 1447-1453
7 p.
|
artikel
|
| 15 |
Particularities of the photoelectronic response in structures with surface traps
|
Dugaev, V.K.
|
|
1990
|
33 |
11 |
p. 1355-1358
4 p.
|
artikel
|
| 16 |
Recombination of injected charge carriers
|
Pimbley, J.M.
|
|
1990
|
33 |
11 |
p. 1333-1338
6 p.
|
artikel
|
| 17 |
Rie-induced damage in MOS structures
|
de Dios, A.
|
|
1990
|
33 |
11 |
p. 1419-1423
5 p.
|
artikel
|
| 18 |
Size effects in microstructured resonant tunneling diodes
|
Schnell, R.D.
|
|
1990
|
33 |
11 |
p. 1467-1470
4 p.
|
artikel
|
| 19 |
Sputter-etching and plasma effects on the electrical properties of titanium nitride contacts on n-type silicon
|
Ang, S.S.
|
|
1990
|
33 |
11 |
p. 1387-1391
5 p.
|
artikel
|
| 20 |
Structure and electrical properties of Ge/Au ohmic contacts to n-type GaAs formed by rapid thermal annealing
|
Crouch, M.A.
|
|
1990
|
33 |
11 |
p. 1437-1446
10 p.
|
artikel
|
| 21 |
Study of avalanche multiplication in planar-terminated junctions
|
Akhtar, J.
|
|
1990
|
33 |
11 |
p. 1459-1466
8 p.
|
artikel
|
| 22 |
The effects of oxygen implantation on n-type layers formed by silicon implantation in gallium arsenide
|
Whitehead, N.J.
|
|
1990
|
33 |
11 |
p. 1493-1497
5 p.
|
artikel
|
| 23 |
The evolution of the MINIMOS mobility model
|
Selberherr, Siegfried
|
|
1990
|
33 |
11 |
p. 1425-1436
12 p.
|
artikel
|
| 24 |
Two-dimensional analysis of the I-V characteristics of normally-off bipolar-mode FET devices
|
Spirito, Paolo
|
|
1990
|
33 |
11 |
p. 1401-1417
17 p.
|
artikel
|
Tijdschrift beschrijving