| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fast approach for calculations of silicon MESFET characteristics from suprem doping profiles
|
Tirén, J.
|
|
1989
|
32 |
9 |
p. 711-716
6 p.
|
artikel
|
| 2 |
A new analytical and statistical-oriented approach for the two-dimensional threshold analysis of short-channel MOSFETs
|
Conti, M.
|
|
1989
|
32 |
9 |
p. 739-747
9 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1989
|
32 |
9 |
p. i-
1 p.
|
artikel
|
| 4 |
Characterization of a quantum well Al x PGa1-x As/GaAs photodetector
|
Hajjar, F.
|
|
1989
|
32 |
9 |
p. 801-805
5 p.
|
artikel
|
| 5 |
Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range
|
Huang, C.-L.
|
|
1989
|
32 |
9 |
p. 767-775
9 p.
|
artikel
|
| 6 |
Clustering of random point defects and yield statistics in VLSI circuit fabrication
|
Neudecker, Bernhard
|
|
1989
|
32 |
9 |
p. 807-809
3 p.
|
artikel
|
| 7 |
Corrigendum
|
|
|
1989
|
32 |
9 |
p. I-
1 p.
|
artikel
|
| 8 |
Deep-level spectroscopy of Cr-doped GaAs using nondestructive acousto-electric voltage measurements
|
Tabib-Azar, M.
|
|
1989
|
32 |
9 |
p. 749-754
6 p.
|
artikel
|
| 9 |
Editorial — software survey section
|
|
|
1989
|
32 |
9 |
p. III-V
nvt p.
|
artikel
|
| 10 |
Effect of composition and growth conditions on the properties of Al x Ga1-x Sb epilayers
|
Su, Y.K.
|
|
1989
|
32 |
9 |
p. 733-738
6 p.
|
artikel
|
| 11 |
Geometry effects on the GaAs bipolar-unipolar negative differential resistance transistor
|
Yarn, K.F.
|
|
1989
|
32 |
9 |
p. 755-760
6 p.
|
artikel
|
| 12 |
Impurity and mobility profiling by channel conductance measurements
|
Ouwerling, Gertjan L.
|
|
1989
|
32 |
9 |
p. 777-790
14 p.
|
artikel
|
| 13 |
Modeling of field-effect transistors with laterally graded doping
|
Patil, M.B.
|
|
1989
|
32 |
9 |
p. 791-795
5 p.
|
artikel
|
| 14 |
Noise characteristics of a Si/SiGe resonant tunneling diode
|
Okada, Yukihiko
|
|
1989
|
32 |
9 |
p. 797-800
4 p.
|
artikel
|
| 15 |
On the diffusivity-mobility ratio in quantum well wires of GaAs
|
Mitra, B.
|
|
1989
|
32 |
9 |
p. 810-811
2 p.
|
artikel
|
| 16 |
Theoretical investigation of the C-V relationship for an amorphous silicon p-n junction
|
Tsai, Hsiung-Kuang
|
|
1989
|
32 |
9 |
p. 727-731
5 p.
|
artikel
|
| 17 |
Theory of space-charge-limited currents in materials with an exponential energy distribution of capture centers
|
Gildenblat, Gennady Sh.
|
|
1989
|
32 |
9 |
p. 717-726
10 p.
|
artikel
|
| 18 |
Three-dimensional properties of conduction electrons in semiconductor superlattices
|
Shigekawa, Naoteru
|
|
1989
|
32 |
9 |
p. 761-766
6 p.
|
artikel
|
| 19 |
Two-dimensional transient simulation of the turn-off behavior of a planar MOS-transistor
|
Kausel, W.
|
|
1989
|
32 |
9 |
p. 685-709
25 p.
|
artikel
|
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