| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A MOSFET structure for a negative resistance device
|
Prasad, C.Guru
|
|
1989
|
32 |
8 |
p. 682-683
2 p.
|
article
|
| 2 |
Announcement
|
|
|
1989
|
32 |
8 |
p. i-
1 p.
|
article
|
| 3 |
Anomalous behaviour of n-channel MOS transistor characteristics in the temperature range 4.2–14 K
|
Rocofyllou, E.
|
|
1989
|
32 |
8 |
p. 603-605
3 p.
|
article
|
| 4 |
Circuit modeling of transient emitter crowding and dynamic resistance effects for advanced bipolar transistors
|
Yuan, J.-S.
|
|
1989
|
32 |
8 |
p. 623-631
9 p.
|
article
|
| 5 |
Comparison of the conventional and extended WKB approximations for tunneling in semiconductors
|
Chakraborty, P.K.
|
|
1989
|
32 |
8 |
p. 633-636
4 p.
|
article
|
| 6 |
Editorial — software survey section
|
|
|
1989
|
32 |
8 |
p. I-III
nvt p.
|
article
|
| 7 |
Effective and field-effect mobilities in Si MOSFETs
|
Kang, J.S.
|
|
1989
|
32 |
8 |
p. 679-681
3 p.
|
article
|
| 8 |
Effect of self-heating on the ideal static characteristics of GaAlAs light-emitting diodes
|
Marandet, F.
|
|
1989
|
32 |
8 |
p. 607-614
8 p.
|
article
|
| 9 |
Electrical properties of Al/n-GaSb contacts
|
Juang, F.S.
|
|
1989
|
32 |
8 |
p. 661-664
4 p.
|
article
|
| 10 |
Electron tunneling from polysilicon asperities into poly-oxides
|
Roy, Anirban
|
|
1989
|
32 |
8 |
p. 655-659
5 p.
|
article
|
| 11 |
Heavy doping effects on the I–V and stored charge characteristics of narrow base pin diodes
|
Müller, Alexandru
|
|
1989
|
32 |
8 |
p. 593-601
9 p.
|
article
|
| 12 |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
|
Hwu, Jenn-Gwo
|
|
1989
|
32 |
8 |
p. 615-621
7 p.
|
article
|
| 13 |
Interface barrier height in ZnSe/GaAs structures
|
Colak, S.
|
|
1989
|
32 |
8 |
p. 647-653
7 p.
|
article
|
| 14 |
I–V characteristics of integrated n + pn − reachthrough diodes
|
Nanver, L.K.
|
|
1989
|
32 |
8 |
p. 637-645
9 p.
|
article
|
| 15 |
Modeling of the DX center trapping effect on a HEMT using a depletion approximation
|
Wang, Chong-Lung
|
|
1989
|
32 |
8 |
p. 669-673
5 p.
|
article
|
| 16 |
On the modelling of tunnelling currents in reverse-biased p-n junctions
|
Hurkx, G.A.M.
|
|
1989
|
32 |
8 |
p. 665-668
4 p.
|
article
|
| 17 |
Simulations of collector resistance of pnp transistors for complementary bipolar technology
|
Lu, Pong-Fei
|
|
1989
|
32 |
8 |
p. 675-678
4 p.
|
article
|
Journal description