| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new method for carrier lifetime measurements in PIN diodes
|
Szczȩsny, Juliusz
|
|
1989
|
32 |
2 |
p. 125-130
6 p.
|
artikel
|
| 2 |
Coupling capacitances in VLSI circuits calculated by multi-dimensional discrete Fourier series
|
Lai, F.S.
|
|
1989
|
32 |
2 |
p. 141-148
8 p.
|
artikel
|
| 3 |
Editorial — Software survey section
|
|
|
1989
|
32 |
2 |
p. I-III
nvt p.
|
artikel
|
| 4 |
Investigation of high-current effects on the current gain of AlxGa1−xAs/GaAs/GaAs abrupt heterojunction bipolar transistors
|
Liou, J.J.
|
|
1989
|
32 |
2 |
p. 169-174
6 p.
|
artikel
|
| 5 |
Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates
|
George, Peter
|
|
1989
|
32 |
2 |
p. 165-168
4 p.
|
artikel
|
| 6 |
On the effective electron mass in N-channel inversion layers of Ge
|
Mitra, B.
|
|
1989
|
32 |
2 |
p. 177-178
2 p.
|
artikel
|
| 7 |
On the scaling of an ion-implanted silicon MESFET
|
Chatttopadhyay, S.N.
|
|
1989
|
32 |
2 |
p. 119-123
5 p.
|
artikel
|
| 8 |
Optimization of the cavity for silicide Schottky infrared detectors
|
Kuriański, J.M.
|
|
1989
|
32 |
2 |
p. 97-101
5 p.
|
artikel
|
| 9 |
Parasitic lateral bipolar transistors in CMOS
|
Deferm, L.
|
|
1989
|
32 |
2 |
p. 103-109
7 p.
|
artikel
|
| 10 |
Potentials and junctions in degenerate semiconductors
|
Keyes, R.W.
|
|
1989
|
32 |
2 |
p. 159-164
6 p.
|
artikel
|
| 11 |
Realization of a high-voltage planar junction termination for power devices
|
Schulze, H.J.
|
|
1989
|
32 |
2 |
p. 175-176
2 p.
|
artikel
|
| 12 |
Series resistance in a MOS capacitor with a thin gate oxide
|
Iniewski, K.
|
|
1989
|
32 |
2 |
p. 137-140
4 p.
|
artikel
|
| 13 |
Simulation of the amorphous silicon static induction transistor
|
Kemp, M.
|
|
1989
|
32 |
2 |
p. 149-157
9 p.
|
artikel
|
| 14 |
Slow trapping measurements in the Insb-Anodic oxide interface
|
Adar, R.
|
|
1989
|
32 |
2 |
p. 111-118
8 p.
|
artikel
|
| 15 |
The conduction properties of Plasma-Enhanced Low-Pressure Chemical Vapour Deposited (PELPCVD) SIPOS
|
England, P.J.
|
|
1989
|
32 |
2 |
p. 131-135
5 p.
|
artikel
|
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