| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A lucky drift model, including a soft threshold energy, for the relation between gate and substrate currents in MOSFETs
|
Tanaka, Sumio
|
|
1989
|
32 |
11 |
p. 935-946
12 p.
|
artikel
|
| 2 |
Analysis of the voltage reference fluctuations of subsurface zener diodes
|
Mikolaj, V.
|
|
1989
|
32 |
11 |
p. 983-991
9 p.
|
artikel
|
| 3 |
An analytic solution of the two-dimensional poisson equation and a model of gate current and breakdown voltage for reverse gate-drain bias in GaAs MESFETs
|
Chang, Chian-Sern
|
|
1989
|
32 |
11 |
p. 971-978
8 p.
|
artikel
|
| 4 |
An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate
|
Tirén, J.
|
|
1989
|
32 |
11 |
p. 993-996
4 p.
|
artikel
|
| 5 |
A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts
|
Donoval, D.
|
|
1989
|
32 |
11 |
p. 961-964
4 p.
|
artikel
|
| 6 |
Burst-type noise mechanisms in bipolar transistors
|
Wu, X.L.
|
|
1989
|
32 |
11 |
p. 1039-1042
4 p.
|
artikel
|
| 7 |
Charge control in a Laser Processed superlattice High Electron Mobility Transistor (LPHEMT)
|
Halkias, G.
|
|
1989
|
32 |
11 |
p. 979-981
3 p.
|
artikel
|
| 8 |
Combined proton and electron irradiation for improved GTO thyristors
|
Hallén, Anders
|
|
1989
|
32 |
11 |
p. 1033-1037
5 p.
|
artikel
|
| 9 |
Contact resistivities of Al and Ti on Si measured by a self-aligned vertical Kelvin test resistor structure
|
Yang, Wen Luh
|
|
1989
|
32 |
11 |
p. 997-1001
5 p.
|
artikel
|
| 10 |
Dopant diffusion in n+ p+ poly gate CMOS process
|
Lin, Wen
|
|
1989
|
32 |
11 |
p. 965-969
5 p.
|
artikel
|
| 11 |
Editorial — Software survey section
|
|
|
1989
|
32 |
11 |
p. I-III
nvt p.
|
artikel
|
| 12 |
Efficient two-dimensional multilayer process simulation of advanced bipolar devices
|
Baccus, Bruno
|
|
1989
|
32 |
11 |
p. 1013-1023
11 p.
|
artikel
|
| 13 |
High T c superconductors for digital system interconnections
|
Tewksbury, S.K.
|
|
1989
|
32 |
11 |
p. 947-959
13 p.
|
artikel
|
| 14 |
Improvement of dark signal and near IR response of imaging CCD under vacuum surface operation
|
Hava, S.
|
|
1989
|
32 |
11 |
p. 1048-1050
3 p.
|
artikel
|
| 15 |
Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperatures
|
Deen, M.J.
|
|
1989
|
32 |
11 |
p. 1009-1012
4 p.
|
artikel
|
| 16 |
Modeling of the I–V characteristics of single and double barrier tunneling diodes using A k · p band model
|
Mui, D.
|
|
1989
|
32 |
11 |
p. 1025-1031
7 p.
|
artikel
|
| 17 |
New principles of high power switching with semiconductor devices
|
Grekhov, I.V.
|
|
1989
|
32 |
11 |
p. 923-930
8 p.
|
artikel
|
| 18 |
1/ƒ noise in HgCdTe MISFETs
|
Schiebel, R.A.
|
|
1989
|
32 |
11 |
p. 1003-1007
5 p.
|
artikel
|
| 19 |
Observation of zero temperature coefficient of capacitance in the MOS capacitor
|
Ling, C.H.
|
|
1989
|
32 |
11 |
p. 1043-1044
2 p.
|
artikel
|
| 20 |
Subthreshold behaviour of silicon MESFETs on SOS and bulk silicon substrates
|
Magnusson, U.
|
|
1989
|
32 |
11 |
p. 931-934
4 p.
|
artikel
|
| 21 |
The effects of air-semiconductor depletion on hall effect profiling of ion-implanted semiconductors
|
Whitehead, N.J.
|
|
1989
|
32 |
11 |
p. 1045-1047
3 p.
|
artikel
|
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