| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A hydrogenated amorphous Si/SiC heterojunction phototransistor
|
Hong, J.W.
|
|
1989
|
32 |
10 |
p. 883-886
4 p.
|
artikel
|
| 2 |
Amorphous-crystalline silicon heterojunction: Theoretical evaluation of the current terms
|
Rubinelli, F.
|
|
1989
|
32 |
10 |
p. 813-825
13 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1989
|
32 |
10 |
p. i-ii
nvt p.
|
artikel
|
| 4 |
Carrier transport near the Si/SiO2 interface of a MOSFET
|
Hänsch, W.
|
|
1989
|
32 |
10 |
p. 839-849
11 p.
|
artikel
|
| 5 |
Comments on “simplified modelling of delays in the emitter-base junction”
|
van den Biesen, J.J.H.
|
|
1989
|
32 |
10 |
p. 922-
1 p.
|
artikel
|
| 6 |
Editorial - software survey section
|
|
|
1989
|
32 |
10 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Generation of interface states and oxide charges in n-MOS structures due to high electric field
|
Tolpadi, Amita
|
|
1989
|
32 |
10 |
p. 919-921
3 p.
|
artikel
|
| 8 |
Generation-recombination-type 1 ƒ noise in nip diodes
|
van der Ziel, A.
|
|
1989
|
32 |
10 |
p. 905-907
3 p.
|
artikel
|
| 9 |
Influence of dynamical interactions between density and mobility of carriers in the channel on 1 ƒ noise of MOS transistors below saturation—II. Implications
|
Grabowski, Franciszek
|
|
1989
|
32 |
10 |
p. 915-918
4 p.
|
artikel
|
| 10 |
Influence of dynamical interactions between density and mobility of carriers in the channel on 1 ƒ noise of MOS transistors below saturation—I. Mechanisms
|
Grabowski, Franciszek
|
|
1989
|
32 |
10 |
p. 909-913
5 p.
|
artikel
|
| 11 |
Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors
|
Elshabini-Riad, Aicha
|
|
1989
|
32 |
10 |
p. 853-860
8 p.
|
artikel
|
| 12 |
Iteration approach for solving the Boltzmann equation with the Monte Carlo method
|
Nedjalkov, M.
|
|
1989
|
32 |
10 |
p. 893-896
4 p.
|
artikel
|
| 13 |
Mathematical analysis of amorphous silicon phototransistors
|
Chen, Inan
|
|
1989
|
32 |
10 |
p. 887-892
6 p.
|
artikel
|
| 14 |
Numerical and analytical modelling of non ohmic MOSFET operation at liquid helium temperature
|
Hafez, I.M.
|
|
1989
|
32 |
10 |
p. 861-865
5 p.
|
artikel
|
| 15 |
Performance-oriented scaling laws for mixed analog/digital MOS circuits
|
Singh, Rajinder
|
|
1989
|
32 |
10 |
p. 835-838
4 p.
|
artikel
|
| 16 |
Temperature dependent effects and catastrophic burnout of the integrated series impatt structure (ISIS) diodes
|
Christou, A.
|
|
1989
|
32 |
10 |
p. 897-904
8 p.
|
artikel
|
| 17 |
The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique
|
Chung, James E.
|
|
1989
|
32 |
10 |
p. 867-882
16 p.
|
artikel
|
| 18 |
The influence of grain boundaries on the performance efficiency of polycrystalline gallium arsenide solar cells
|
Mohammad, S.Noor
|
|
1989
|
32 |
10 |
p. 827-834
8 p.
|
artikel
|
| 19 |
Ultrahigh voltage silicon P−N junctions with a breakdown voltage above 20 kV
|
Astrova, E.V.
|
|
1989
|
32 |
10 |
p. 851-852
2 p.
|
artikel
|
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