nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A general theory of an intensity-modulated beam method for determination of diffusion length, diffusion constant, lifetime, surface recombination velocity and absorption coefficient in a semiconductor material
|
Gupta, Sudha |
|
1988 |
31 |
9 |
p. 1401-1407 7 p. |
artikel |
2 |
Analytical model for leakage current in InGaAsP avalanche photodiodes
|
Elshabini-Riad, Aicha |
|
1988 |
31 |
9 |
p. 1413-1420 8 p. |
artikel |
3 |
A new experimental method to determine the saturation voltage of a small-geometry MOSFET
|
Jang, Wen-Yueh |
|
1988 |
31 |
9 |
p. 1421-1431 11 p. |
artikel |
4 |
Built-in space charge at junctions between heavily doped and semi-insulating GaAs layers
|
Lehovec, K. |
|
1988 |
31 |
9 |
p. 1433-1440 8 p. |
artikel |
5 |
Corrigendum
|
|
|
1988 |
31 |
9 |
p. I- 1 p. |
artikel |
6 |
Dynamic screening for ionized impurity scattering in degenerate semiconductors
|
Chung, Wei-Ye |
|
1988 |
31 |
9 |
p. 1369-1374 6 p. |
artikel |
7 |
Editorial—Software survey section
|
|
|
1988 |
31 |
9 |
p. III-V nvt p. |
artikel |
8 |
Electromigration in bipolar NPN transistors
|
Wada, T. |
|
1988 |
31 |
9 |
p. 1409-1412 4 p. |
artikel |
9 |
Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors
|
Marty, A. |
|
1988 |
31 |
9 |
p. 1375-1382 8 p. |
artikel |
10 |
Fine structure of heat flow path in semiconductor devices: A measurement and identification method
|
Székely, Vladimir |
|
1988 |
31 |
9 |
p. 1363-1368 6 p. |
artikel |
11 |
Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons
|
Lin, Wallace Wan-Li |
|
1988 |
31 |
9 |
p. 1451-1459 9 p. |
artikel |
12 |
Lateral PIN diodes for silicon-on-insulator monolithic microwave integrated circuits
|
Wu, S. |
|
1988 |
31 |
9 |
p. 1397-1400 4 p. |
artikel |
13 |
Measurement of layers of submicron thickness with the aid of a microdensitometer
|
Teh, S.T. |
|
1988 |
31 |
9 |
p. 1461-1463 3 p. |
artikel |
14 |
On the design of tunable quantum well infrared photodetectors
|
Ikonić, Z. |
|
1988 |
31 |
9 |
p. 1447-1449 3 p. |
artikel |
15 |
On the recombination and diffusion limited surface recombination velocities
|
Dhariwal, S.R. |
|
1988 |
31 |
9 |
p. 1355-1361 7 p. |
artikel |
16 |
Response to “numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor”
|
Taylor, G.W. |
|
1988 |
31 |
9 |
p. 1467-1468 2 p. |
artikel |
17 |
Response to the comments by Simmons and Taylor
|
Meyyappan, M. |
|
1988 |
31 |
9 |
p. 1469- 1 p. |
artikel |
18 |
Simplified modelling of delays in the emitter-base junction
|
Negus, K.J. |
|
1988 |
31 |
9 |
p. 1464-1466 3 p. |
artikel |
19 |
Threshold voltage characteristics of ion-implanted depletion MOSFETs
|
Tarasewicz, S.W. |
|
1988 |
31 |
9 |
p. 1441-1446 6 p. |
artikel |
20 |
Variance of 1 f γ noise
|
Ambrózy, A. |
|
1988 |
31 |
9 |
p. 1391-1395 5 p. |
artikel |
21 |
Voltage saturation at the high-low junction and its effect on the I-V characteristics of a diode
|
Dhariwal, S.R. |
|
1988 |
31 |
9 |
p. 1383-1389 7 p. |
artikel |