| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytic results for the base region of bipolar transistors based on computer simulations
|
Zugelder, Ulrike
|
|
1987
|
30 |
9 |
p. 895-900
6 p.
|
artikel
|
| 2 |
An approach to determining impact ionization rates in semiconductor junctions
|
Ito, Masanori
|
|
1987
|
30 |
9 |
p. 969-971
3 p.
|
artikel
|
| 3 |
A three-dimensional threshold voltage expression for MOSFETs with deep-trench isolation
|
Wang, Cheng T.
|
|
1987
|
30 |
9 |
p. 984-987
4 p.
|
artikel
|
| 4 |
Crystal structure and band gap of AlGaAsN
|
Munich, D.P.
|
|
1987
|
30 |
9 |
p. 901-906
6 p.
|
artikel
|
| 5 |
Editorial — Software survey section
|
|
|
1987
|
30 |
9 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Effects of thermal nitridation on the trapping characteristics of SiO2 films
|
Yankova, A.
|
|
1987
|
30 |
9 |
p. 939-946
8 p.
|
artikel
|
| 7 |
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells
|
Harame, David
|
|
1987
|
30 |
9 |
p. 907-912
6 p.
|
artikel
|
| 8 |
Ellipsometry measurements on SiO2 films for thicknesses under 200Å
|
Jau Hwang Ho,
|
|
1987
|
30 |
9 |
p. 973-981
9 p.
|
artikel
|
| 9 |
Experimentally observed deviations from the superposition principle in crystalline silicon solar cells at low illuminations
|
Chan, D.S.H.
|
|
1987
|
30 |
9 |
p. 919-925
7 p.
|
artikel
|
| 10 |
Generalized energy-momentum conservation equations in the relaxation time approximation
|
Azoff, E.M.
|
|
1987
|
30 |
9 |
p. 913-917
5 p.
|
artikel
|
| 11 |
Low temperature formation of insulating layers on silicides by anodic oxidation
|
Strydom, W.J.
|
|
1987
|
30 |
9 |
p. 947-951
5 p.
|
artikel
|
| 12 |
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
|
Wong, Hon-Sum
|
|
1987
|
30 |
9 |
p. 953-968
16 p.
|
artikel
|
| 13 |
Photo-accelerated MOS-C C−t transient measurements
|
Pierret, R.F.
|
|
1987
|
30 |
9 |
p. 983-984
2 p.
|
artikel
|
| 14 |
Retention-temperature and endurance characteristics of the MNOS capacitor with processing variations as parameter
|
de Almeida, A.M.
|
|
1987
|
30 |
9 |
p. 889-894
6 p.
|
artikel
|
| 15 |
The non-ideal current in bipolar transistors
|
Jones, B.K.
|
|
1987
|
30 |
9 |
p. 987-989
3 p.
|
artikel
|
| 16 |
The spectral response and efficiency of heavily doped emitters in silicon photovoltaic devices
|
Jain, S.C.
|
|
1987
|
30 |
9 |
p. 927-937
11 p.
|
artikel
|
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