| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical models for AlGaAs/GaAs heterojunction quantum wells
|
Khondker, A.N.
|
|
1987
|
30 |
8 |
p. 847-852
6 p.
|
artikel
|
| 2 |
A new long-channel MOSFET model
|
Zhang, Q.Z.
|
|
1987
|
30 |
8 |
p. 859-864
6 p.
|
artikel
|
| 3 |
A new model for CMOS latch-up
|
Li, Wei
|
|
1987
|
30 |
8 |
p. 885-887
3 p.
|
artikel
|
| 4 |
A polysilicon-on-oxide (POSOX) isolation structure for bipolar integrated circuits
|
Lee, Chung-Len
|
|
1987
|
30 |
8 |
p. 841-845
5 p.
|
artikel
|
| 5 |
A simplified computer analysis for n-well guard ring efficiency in CMOS circuits
|
Chen, Ming-Jer
|
|
1987
|
30 |
8 |
p. 879-882
4 p.
|
artikel
|
| 6 |
Characterization of chemically deoxidized liquid phase epitaxial GaAs
|
Chang, S.C.
|
|
1987
|
30 |
8 |
p. 779-786
8 p.
|
artikel
|
| 7 |
Charge generation in thin SiO2 polysilicon-gate MOS capacitors
|
Fazan, P.
|
|
1987
|
30 |
8 |
p. 829-834
6 p.
|
artikel
|
| 8 |
Editorial — Software survey section
|
|
|
1987
|
30 |
8 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Effective length and width of MOSFETs determined with three transistors
|
Satter, J.H.
|
|
1987
|
30 |
8 |
p. 821-828
8 p.
|
artikel
|
| 10 |
Electrical behavior of Np AlGaAs/GaAs heterojunctions with high acceptor concentrations
|
Imai, Tetsuji
|
|
1987
|
30 |
8 |
p. 865-871
7 p.
|
artikel
|
| 11 |
Fowler-Nordheim tunneling in implanted MOS devices
|
Wolters, D.R.
|
|
1987
|
30 |
8 |
p. 835-839
5 p.
|
artikel
|
| 12 |
Investigation of numerical algorithms in semiconductor device simulation
|
Yoshii, Akira
|
|
1987
|
30 |
8 |
p. 813-820
8 p.
|
artikel
|
| 13 |
Non-quasi-static small-signal models for semiconductor junction diodes with extensions for transistors
|
Chen, Meng-Kai
|
|
1987
|
30 |
8 |
p. 883-885
3 p.
|
artikel
|
| 14 |
Numerical simulation of GaAs MESFETS including velocity overshoot
|
Stenzel, R.
|
|
1987
|
30 |
8 |
p. 873-877
5 p.
|
artikel
|
| 15 |
On the choice of appropriate ionization coefficients for breakdown voltage calculations
|
Goud, C.Basavana
|
|
1987
|
30 |
8 |
p. 787-792
6 p.
|
artikel
|
| 16 |
Photovoltaics in a single dimension
|
De Vos, Alexis
|
|
1987
|
30 |
8 |
p. 853-858
6 p.
|
artikel
|
| 17 |
Profiling generation lifetime in an MOS capacitor using a multistep constant-capacitance technique
|
Lal, R.
|
|
1987
|
30 |
8 |
p. 801-805
5 p.
|
artikel
|
| 18 |
Steady state lattice heating by hot carriers in silicon bipolar transistors
|
Szeto, Simon
|
|
1987
|
30 |
8 |
p. 887-888
2 p.
|
artikel
|
| 19 |
Subthreshold characteristics of DMOS and CMOS transistors in high voltage BCDMOS technology
|
Lu, C.Y.
|
|
1987
|
30 |
8 |
p. 793-799
7 p.
|
artikel
|
| 20 |
The dependence of AlGaAs/GaAs MODFET isolation on material and device structure
|
Ezis, A.
|
|
1987
|
30 |
8 |
p. 807-811
5 p.
|
artikel
|
Tijdschrift beschrijving