| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A two-dimensional device simulator of semiconductor lasers
|
Ohtoshi, T.
|
|
1987
|
30 |
6 |
p. 627-638
12 p.
|
artikel
|
| 2 |
Bulk and contact electrical properties by the magneto-transmission-line method: Application to GaAs
|
Look, D.C.
|
|
1987
|
30 |
6 |
p. 615-618
4 p.
|
artikel
|
| 3 |
Comments on “an improved model to explain ohmic contact resistance of n-GaAs and other semiconductors”
|
Gupta, Ram P.
|
|
1987
|
30 |
6 |
p. 672-
1 p.
|
artikel
|
| 4 |
Comparison between front-side and back-side irradiation in rapid lamp-annealing of silicon-implanted GaAs
|
Okamoto, K.
|
|
1987
|
30 |
6 |
p. 601-605
5 p.
|
artikel
|
| 5 |
Conduction properties of silicon dioxide in oxide-nitride-oxide structures
|
Manzini, S.
|
|
1987
|
30 |
6 |
p. 587-591
5 p.
|
artikel
|
| 6 |
Editorial - Software survey section
|
Dunlap, W.Crawford
|
|
1987
|
30 |
6 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Effects of finite dimensions on the LBIC photocurrent expressed with an analytical two-dimensional solution
|
Arab, A.Ben
|
|
1987
|
30 |
6 |
p. 667-672
6 p.
|
artikel
|
| 8 |
Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices
|
Mnatsakanov, T.T.
|
|
1987
|
30 |
6 |
p. 579-585
7 p.
|
artikel
|
| 9 |
Investigations on field enhanced generation in semiconductors
|
Rabbani, K.S.
|
|
1987
|
30 |
6 |
p. 607-613
7 p.
|
artikel
|
| 10 |
Noise characteristics of ionizing-radiation-stressed MOSFET devices
|
Neelakantaswamy, P.S.
|
|
1987
|
30 |
6 |
p. 673-674
2 p.
|
artikel
|
| 11 |
Numerical verification of substrate current model in silicon IGFETs
|
Faricelli, John
|
|
1987
|
30 |
6 |
p. 655-662
8 p.
|
artikel
|
| 12 |
Performance analysis of sub-micron gate GaAs MESFETs
|
El-Sayed, Osman L.
|
|
1987
|
30 |
6 |
p. 643-654
12 p.
|
artikel
|
| 13 |
Scanned electron beam alloyed ohmic contacts to n-GaAs
|
Kalkur, T.S.
|
|
1987
|
30 |
6 |
p. 619-625
7 p.
|
artikel
|
| 14 |
Sensitive thermometry using capacitance variation of GaP LEDs
|
Zafar Iqbal, M.
|
|
1987
|
30 |
6 |
p. 639-641
3 p.
|
artikel
|
| 15 |
Study of solid-phase reactions of metals on GaAs with a TiN diffusion barrier
|
Liew, B.-K.
|
|
1987
|
30 |
6 |
p. 571-578
8 p.
|
artikel
|
| 16 |
Surface recombination velocity in MINP solar cells
|
Soliman, M.Y.
|
|
1987
|
30 |
6 |
p. 663-666
4 p.
|
artikel
|
| 17 |
Theoretical C(V) equation of an amorphous-crystalline heterojunction at low frequency
|
Rubinelli, F.A.
|
|
1987
|
30 |
6 |
p. 593-599
7 p.
|
artikel
|
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