| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer method for the characterization of surface-layer ohmic contacts
|
Brezeanu, Gheorghe
|
|
1987
|
30 |
5 |
p. 527-532
6 p.
|
artikel
|
| 2 |
A finite-element model and characterization of the p-i-n magnetodiode at microwave frequencies
|
Caverly, Robert
|
|
1987
|
30 |
5 |
p. 473-477
5 p.
|
artikel
|
| 3 |
A method to improve the speed and sensitivity of constant-capacitance voltage transient measurements
|
Jeng-Jye Shiau,
|
|
1987
|
30 |
5 |
p. 513-518
6 p.
|
artikel
|
| 4 |
Analysis of sit I–V characteristics by two-dimensional simulation
|
Yamamoto, T.
|
|
1987
|
30 |
5 |
p. 549-557
9 p.
|
artikel
|
| 5 |
An analytic model for high-electron-mobility transistors
|
Chang, Chian S.
|
|
1987
|
30 |
5 |
p. 485-491
7 p.
|
artikel
|
| 6 |
Announcement
|
|
|
1987
|
30 |
5 |
p. i-
1 p.
|
artikel
|
| 7 |
A unified analytical model for drain-induced barrier lowering and drain-induced high electric field in a short-channel MOSFET
|
Jain, S.C.
|
|
1987
|
30 |
5 |
p. 503-511
9 p.
|
artikel
|
| 8 |
Editorial — software survey section
|
|
|
1987
|
30 |
5 |
p. I-III
nvt p.
|
artikel
|
| 9 |
General calculation of MOSFET transconductance in the saturation range: Electric-field-induced improvement in the strong-inversion region
|
Felix, P.
|
|
1987
|
30 |
5 |
p. 463-471
9 p.
|
artikel
|
| 10 |
Ion-implanted GaAs slow wave monolithic structure
|
Krowne, Clifford M.
|
|
1987
|
30 |
5 |
p. 497-502
6 p.
|
artikel
|
| 11 |
Modelling of MOSFETS at strong narrow pulses for VLSI applications
|
El-Hennawy, A.
|
|
1987
|
30 |
5 |
p. 519-526
8 p.
|
artikel
|
| 12 |
Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence
|
Arora, Narain D.
|
|
1987
|
30 |
5 |
p. 559-569
11 p.
|
artikel
|
| 13 |
Space-charge-limited current flow through semi-insulating gallium arsenide
|
Lehovec, Kurt
|
|
1987
|
30 |
5 |
p. 479-483
5 p.
|
artikel
|
| 14 |
The conduction properties of SIPOS
|
Bolt, M.J.B.
|
|
1987
|
30 |
5 |
p. 533-542
10 p.
|
artikel
|
| 15 |
The influence of passivation and packaging on electromigration
|
Tetsuaki Wada,
|
|
1987
|
30 |
5 |
p. 493-496
4 p.
|
artikel
|
| 16 |
The relative contributions of recombination and tunnelling at interface states to the a.c. conductance of metal-insulator-semiconductor diodes
|
Sands, D.
|
|
1987
|
30 |
5 |
p. 543-548
6 p.
|
artikel
|
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