| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A first-order theory of the static induction transistor
|
Bulucea, C.
|
|
1987
|
30 |
12 |
p. 1227-1242
16 p.
|
artikel
|
| 2 |
A new boron implantation model suitable for analytical modeling of threshold voltage of MOSFETs
|
Gupta, A.Das
|
|
1987
|
30 |
12 |
p. 1283-1287
5 p.
|
artikel
|
| 3 |
A new theoretical model for a p-n junction realistic diode
|
Khan, W.I.
|
|
1987
|
30 |
12 |
p. 1221-1225
5 p.
|
artikel
|
| 4 |
A novel two-dimensional MOS transistor for analog applications
|
Aggarwal, Sudhir
|
|
1987
|
30 |
12 |
p. 1323-1329
7 p.
|
artikel
|
| 5 |
Bulk tunneling contribution to the reverse breakdown characteristics of InSb gate controlled diodes
|
Adar, R.
|
|
1987
|
30 |
12 |
p. 1289-1293
5 p.
|
artikel
|
| 6 |
Buried injector logic, a vertical IIL using deep ion implantation
|
Mouthaan, A.J.
|
|
1987
|
30 |
12 |
p. 1243-1249
7 p.
|
artikel
|
| 7 |
Charge trapping in silicon-rich Si3N4 thin films
|
Buchanan, D.A.
|
|
1987
|
30 |
12 |
p. 1295-1301
7 p.
|
artikel
|
| 8 |
Determination of transport parameters for InP device simulations in n + n + structures
|
Tait, Gregory B.
|
|
1987
|
30 |
12 |
p. 1317-1322
6 p.
|
artikel
|
| 9 |
Drift velocity and diffusivity of hot carriers in germanium: Model calculations
|
Omar, M.Ali
|
|
1987
|
30 |
12 |
p. 1351-1354
4 p.
|
artikel
|
| 10 |
Drift velocity and ionization coefficient for holes in single-valley semiconductors
|
Gautam, D.K.
|
|
1987
|
30 |
12 |
p. 1271-1275
5 p.
|
artikel
|
| 11 |
Effect of heating on the structure of Au/GaAs encapsulated with SiO2
|
Zeng, X.-F.
|
|
1987
|
30 |
12 |
p. 1259-1266
8 p.
|
artikel
|
| 12 |
Full Schottky high density 2-D infrared charge coupled detector array
|
Kuriański, Jerzy M.
|
|
1987
|
30 |
12 |
p. 1341-1343
3 p.
|
artikel
|
| 13 |
Laser annealing of GaAs implanted with low doses of selenium ions
|
Akintunde, J.A.
|
|
1987
|
30 |
12 |
p. 1251-1258
8 p.
|
artikel
|
| 14 |
List of contents and author index
|
|
|
1987
|
30 |
12 |
p. i-xviii
nvt p.
|
artikel
|
| 15 |
MOSFET analysis through numerical solution of Poisson's equation by the method of moments
|
Arvas, E.
|
|
1987
|
30 |
12 |
p. 1355-1357
3 p.
|
artikel
|
| 16 |
New integral representations of circuit models and elements for the circuit technique for semiconductor device analysis
|
Sah, C.T.
|
|
1987
|
30 |
12 |
p. 1277-1281
5 p.
|
artikel
|
| 17 |
Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor
|
Asenov, Asen M.
|
|
1987
|
30 |
12 |
p. 1305-1315
11 p.
|
artikel
|
| 18 |
Ohmic contacts on selectively doped AlInAs/GaInAs heterostructures using Ni, AuGe and Au
|
Kamada, M.
|
|
1987
|
30 |
12 |
p. 1345-1349
5 p.
|
artikel
|
| 19 |
Optimization of transconductance in JFETs and MESFETs
|
Solheim, Alan G.
|
|
1987
|
30 |
12 |
p. 1267-1269
3 p.
|
artikel
|
| 20 |
Simple explicit expressions for the moderate inversion limits in long channel MOSFETs for analog applications
|
Bagheri, Mehran
|
|
1987
|
30 |
12 |
p. 1357-1359
3 p.
|
artikel
|
| 21 |
Software survey section
|
|
|
1987
|
30 |
12 |
p. I-III
nvt p.
|
artikel
|
| 22 |
Thermal radiation, thermal noise and zero-point energy
|
Kleen, W.J.
|
|
1987
|
30 |
12 |
p. 1303-1304
2 p.
|
artikel
|
| 23 |
The threshold voltage of short-channel BC-MOSFET in the enhancement mode
|
Tong, K.Y.
|
|
1987
|
30 |
12 |
p. 1359-1361
3 p.
|
artikel
|
| 24 |
Transient analysis for a new CMOS latchup model
|
Li, Wei
|
|
1987
|
30 |
12 |
p. 1331-1339
9 p.
|
artikel
|
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