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Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
21 gevonden resultaten
| nr | titel | auteur | tijdschrift | jaar | jaarg. | afl. | pagina('s) | type |
| 1 | A review of models for heterojunction band offsets |
Unlu, Hilmi |
1987 |
30 | 11 |
p. 1095-1098 4 p. |
artikel |
|
| 2 | Characterization of the heavily (non-degenerate) boron-doped SiSiO2 interface |
Ghannam, Moustafa Y. |
1987 |
30 | 11 |
p. 1147-1152 6 p. |
artikel |
|
| 3 | Editorial - software survey section |
1987 |
30 | 11 |
p. I-III nvt p. |
artikel |
||
| 4 | Emitter injection efficiency in heterojunction bipolar transistors |
Neugroschel, Arnost |
1987 |
30 | 11 |
p. 1171-1173 3 p. |
artikel |
|
| 5 | Foreword and introduction |
Van Overstraeten, R.J. |
1987 |
30 | 11 |
p. v- 1 p. |
artikel |
|
| 6 | Heavy doping effects in silicon |
Van Overstraeten, Roger J. |
1987 |
30 | 11 |
p. 1077-1087 11 p. |
artikel |
|
| 7 | Heterojunctions: Some knowns and unknowns |
Milnes, A.G. |
1987 |
30 | 11 |
p. 1099-1105 7 p. |
artikel |
|
| 8 | Heterostructures in III–V optoelectronic devices |
Baets, R. |
1987 |
30 | 11 |
p. 1175-1182 8 p. |
artikel |
|
| 9 | Heterostructures in MODFETs |
Fritzsche, Dieter |
1987 |
30 | 11 |
p. 1183-1195 13 p. |
artikel |
|
| 10 | III, V heterojunction bipolar transistors |
Bailbe, J.P. |
1987 |
30 | 11 |
p. 1159-1169 11 p. |
artikel |
|
| 11 | II–VI heterojunction device physics |
De Visschere, P. |
1987 |
30 | 11 |
p. 1215-1220 6 p. |
artikel |
|
| 12 | Modeling silicon emitters for VLSI transistors |
Bennett, Herbert S. |
1987 |
30 | 11 |
p. 1137-1141 5 p. |
artikel |
|
| 13 | Modelling of minority-carrier transport in heavily doped silicon emitters |
del Alamo, Jesús A. |
1987 |
30 | 11 |
p. 1127-1136 10 p. |
artikel |
|
| 14 | N-type SIPOS and poly-silicon emitters |
Kwark, Y.H. |
1987 |
30 | 11 |
p. 1121-1125 5 p. |
artikel |
|
| 15 | Optical characterization of heavily doped silicon |
Wagner, Joachim |
1987 |
30 | 11 |
p. 1117-1120 4 p. |
artikel |
|
| 16 | Optimization of II–VI based heterojunctions |
Loferski, Joseph J. |
1987 |
30 | 11 |
p. 1205-1213 9 p. |
artikel |
|
| 17 | Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters |
Symons, J. |
1987 |
30 | 11 |
p. 1143-1145 3 p. |
artikel |
|
| 18 | The band-band Auger effect in semiconductors |
Landsberg, Peter T. |
1987 |
30 | 11 |
p. 1107-1115 9 p. |
artikel |
|
| 19 | The role of the interfacial layer in bipolar (poly-Si)-emitter transistors |
Benna, B. |
1987 |
30 | 11 |
p. 1153-1158 6 p. |
artikel |
|
| 20 | Transport equations for highly doped devices and heterostructures |
Marshak, Alan H. |
1987 |
30 | 11 |
p. 1089-1093 5 p. |
artikel |
|
| 21 | Two-dimensional numerical model for the high electron mobility transistor |
Loret, Dany |
1987 |
30 | 11 |
p. 1197-1203 7 p. |
artikel |
21 gevonden resultaten