| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A dual-wavelength InP channeled-substrate buried-heterostructure laser light-source
|
Koszi, L.A.
|
|
1987
|
30 |
1 |
p. 39-42
4 p.
|
artikel
|
| 2 |
A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients
|
Marsland, J.S.
|
|
1987
|
30 |
1 |
p. 125-132
8 p.
|
artikel
|
| 3 |
Analysis of a high-speed laser-controlled microstrip directional coupler
|
Andersson, I.
|
|
1987
|
30 |
1 |
p. 133-137
5 p.
|
artikel
|
| 4 |
A new high power semiconductor laser array of phase-locking free structure
|
Hamada, K.
|
|
1987
|
30 |
1 |
p. 33-37
5 p.
|
artikel
|
| 5 |
Announcement
|
|
|
1987
|
30 |
1 |
p. V-
1 p.
|
artikel
|
| 6 |
A travelling-wave rate equation analysis for semiconductor lasers
|
Wong, Y.L.
|
|
1987
|
30 |
1 |
p. 13-19
7 p.
|
artikel
|
| 7 |
Editorial
|
Stenventon, Alan G.
|
|
1987
|
30 |
1 |
p. v-
1 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
1987
|
30 |
1 |
p. IFC-
1 p.
|
artikel
|
| 9 |
Frequency dependent characteristics in an ion-implanted photo MESFET
|
Singh, V.K.
|
|
1987
|
30 |
1 |
p. 113-118
6 p.
|
artikel
|
| 10 |
High current gain heterojunction bipolar phototransistor for monolithic integrated photoreceiver
|
Wang, Haila
|
|
1987
|
30 |
1 |
p. 119-124
6 p.
|
artikel
|
| 11 |
High speed semiconductor laser design and performance
|
Bowers, J.E.
|
|
1987
|
30 |
1 |
p. 1-11
11 p.
|
artikel
|
| 12 |
Non-linear dynamics and chaos in semiconductor laser devices
|
Shore, K.A.
|
|
1987
|
30 |
1 |
p. 59-65
7 p.
|
artikel
|
| 13 |
Optical bistability in a pnpn GaAs/GaAlAs laser diode
|
Shou-wu, Wang
|
|
1987
|
30 |
1 |
p. 53-57
5 p.
|
artikel
|
| 14 |
Optical, optoelectronic and electrical bistability and multistability in a silicon Schottky seed
|
Jäger, D.
|
|
1987
|
30 |
1 |
p. 67-71
5 p.
|
artikel
|
| 15 |
Optical parameters of InP-based waveguides
|
Fiedler, F.
|
|
1987
|
30 |
1 |
p. 73-83
11 p.
|
artikel
|
| 16 |
Photocurrent multiplication in GaAs Schottky photodiodes
|
Šafránková, J.
|
|
1987
|
30 |
1 |
p. 93-96
4 p.
|
artikel
|
| 17 |
Physics and applications of optical bistability in semiconductor laser amplifiers
|
Adams, M.J.
|
|
1987
|
30 |
1 |
p. 43-51
9 p.
|
artikel
|
| 18 |
Self-consistent analysis of gain-guided triple stripe lasers
|
Kumar, Tribhawan
|
|
1987
|
30 |
1 |
p. 21-31
11 p.
|
artikel
|
| 19 |
Software survey section
|
|
|
1987
|
30 |
1 |
p. I-III
nvt p.
|
artikel
|
| 20 |
Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion
|
Korde, Raj
|
|
1987
|
30 |
1 |
p. 89-92
4 p.
|
artikel
|
| 21 |
The modelling of lithium outdiffusion in He+ implanted optical waveguides in LiNbO3
|
Skinner, I.M.
|
|
1987
|
30 |
1 |
p. 85-88
4 p.
|
artikel
|
| 22 |
The optimization of the optical cavity of infrared Schottky-barrier detectors
|
Wu, Jyh-Chiarng
|
|
1987
|
30 |
1 |
p. 97-104
8 p.
|
artikel
|
| 23 |
Theory and analysis of transient photoconductivity in CdSe:Cu
|
Joshi, N.V.
|
|
1987
|
30 |
1 |
p. 105-107
3 p.
|
artikel
|
| 24 |
Undoped and chromium-doped semi-insulating GaAs photoconductive detectors
|
Schumm, G.
|
|
1987
|
30 |
1 |
p. 109-112
4 p.
|
artikel
|
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