| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of Li x Ni1−x, O as a mixed-valence thermoelectric material
|
Danko, J.C.
|
|
1961
|
3 |
3-4 |
p. 233-238
6 p.
|
artikel
|
| 2 |
A simplified approach to transistor admittances
|
Lindmayer, J.
|
|
1961
|
3 |
3-4 |
p. 278-290
13 p.
|
artikel
|
| 3 |
British miniature electronic components and assemblies data annual 1961–1962
|
Gibson, Alan F.
|
|
1961
|
3 |
3-4 |
p. 325-
1 p.
|
artikel
|
| 4 |
Characteristics of the space-charge-limited dielectric diode at very high frequencies
|
Shao, J.
|
|
1961
|
3 |
3-4 |
p. 291-303
13 p.
|
artikel
|
| 5 |
Current gain in metal-insulator tunnel triodes
|
|
|
1961
|
3 |
3-4 |
p. 320-322
3 p.
|
artikel
|
| 6 |
Electrical characteristics of a reduced-area, rhodium-plated, silicon end contact
|
Green, M.
|
|
1961
|
3 |
3-4 |
p. 326-
1 p.
|
artikel
|
| 7 |
Electrode geometries for which the transverse magnetoresistance is equivalent to that of a corbino disk
|
Green, Milton
|
|
1961
|
3 |
3-4 |
p. 314-316
3 p.
|
artikel
|
| 8 |
Electronics: a bibliographical guide
|
Gibson, Alan F.
|
|
1961
|
3 |
3-4 |
p. 325-326
2 p.
|
artikel
|
| 9 |
Encyclopaedic dictionary of physics.
|
Pincherle, L.
|
|
1961
|
3 |
3-4 |
p. 324-325
2 p.
|
artikel
|
| 10 |
Growing heavily compensated germanium crystals of known impurity concentrations
|
Lambert, L.M.
|
|
1961
|
3 |
3-4 |
p. 316-317
2 p.
|
artikel
|
| 11 |
Growth of semiconducting compounds from non-stoichiometric melts
|
Hurle, D.T.J.
|
|
1961
|
3 |
3-4 |
p. 317-320
4 p.
|
artikel
|
| 12 |
Improvement of semiconducting devices by elastic strain
|
Pfann, W.G.
|
|
1961
|
3 |
3-4 |
p. 261-267
7 p.
|
artikel
|
| 13 |
Indium antimonide transistors
|
Henneke, H.L.
|
|
1961
|
3 |
3-4 |
p. 159-166
8 p.
|
artikel
|
| 14 |
Influence of wafer thickness and carrier recombination on the cutoff frequency of alloy-junction transistors
|
Amer, S.
|
|
1961
|
3 |
3-4 |
p. 304-308
5 p.
|
artikel
|
| 15 |
Nomograph technique for doping determination in germanium and silicon crystal growing
|
Hemmat, N.
|
|
1961
|
3 |
3-4 |
p. 309-314
6 p.
|
artikel
|
| 16 |
Progress in very high pressure research
|
Warschauer, Douglas
|
|
1961
|
3 |
3-4 |
p. 323-324
2 p.
|
artikel
|
| 17 |
Study of the fast transient behaviour of peltier junctions
|
Landecker, K.
|
|
1961
|
3 |
3-4 |
p. 239-260
22 p.
|
artikel
|
| 18 |
Theoretical current gain of a cylindrical mesa transistor
|
Kennedy, David P.
|
|
1961
|
3 |
3-4 |
p. 215-225
11 p.
|
artikel
|
| 19 |
Theory of the Esaki diode frequency converter
|
Pucel, Robert A.
|
|
1961
|
3 |
3-4 |
p. 167-207
41 p.
|
artikel
|
| 20 |
The performance of a convectively cooled thermoelement used for power generation
|
Rollinger, Charles N.
|
|
1961
|
3 |
3-4 |
p. 268-277
10 p.
|
artikel
|
| 21 |
The selective melting of germanium by thermal radiation
|
Taylor, T.C.
|
|
1961
|
3 |
3-4 |
p. 226-232
7 p.
|
artikel
|
| 22 |
Tunnel-diode power
|
Dermit, G.
|
|
1961
|
3 |
3-4 |
p. 208-214
7 p.
|
artikel
|
Tijdschrift beschrijving