nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An analysis of electroluminescent brightness waves
|
Eriksen, W.T. |
|
1961 |
3 |
1 |
p. 11-17 7 p. |
artikel |
2 |
Bariumtitanat als sperrschichthalbleiter
|
Heywang, W. |
|
1961 |
3 |
1 |
p. 51-58 8 p. |
artikel |
3 |
Constitutional supercooling during crystal growth from stirred melts—I
|
Hurle, D.T.J. |
|
1961 |
3 |
1 |
p. 37-44 8 p. |
artikel |
4 |
Current dependence of αcb in the alloy junction transistor
|
Sato, Kogo |
|
1961 |
3 |
1 |
p. 29-36 8 p. |
artikel |
5 |
Diffusion of charged particles into a semiconductor under consideration of the built-in field
|
Lehovec, Kurt |
|
1961 |
3 |
1 |
p. 45-50 6 p. |
artikel |
6 |
Editorial Board
|
|
|
1961 |
3 |
1 |
p. CO2- 1 p. |
artikel |
7 |
Electrical characteristics of a reduced-area, rhodium-plated, silicon end contact
|
Green, M. |
|
1961 |
3 |
1 |
p. 1-10 10 p. |
artikel |
8 |
Field-retarded diffusion of antimony in germanium
|
Fa, C. |
|
1961 |
3 |
1 |
p. 18-23 6 p. |
artikel |
9 |
Ge or Si junctions made by the surface weld-regrowth process
|
Taylor, T.C. |
|
1961 |
3 |
1 |
p. 70-72 3 p. |
artikel |
10 |
High frequency applications of ferrites
|
Green, Jerome J. |
|
1961 |
3 |
1 |
p. 77-78 2 p. |
artikel |
11 |
Melting phenomena with silicon
|
Goodman, C.H.L. |
|
1961 |
3 |
1 |
p. 72-74 3 p. |
artikel |
12 |
Photoconductivity in single-crystal tellurium
|
Edwards, D.F. |
|
1961 |
3 |
1 |
p. 24-28 5 p. |
artikel |
13 |
Photoconductivity of solids
|
Redington, R.W. |
|
1961 |
3 |
1 |
p. 76- 1 p. |
artikel |
14 |
The forward transient behavior of semi-conductor junction diodes
|
Ko, Wen-Hsiung |
|
1961 |
3 |
1 |
p. 59-69 11 p. |
artikel |
15 |
The hall effect and related phenomena
|
Dunlap, W.C. |
|
1961 |
3 |
1 |
p. 76-77 2 p. |
artikel |
16 |
Thin-film capacitors using tantalum oxide dielectrics prepared by reactive sputtering
|
Lloyd, P. |
|
1961 |
3 |
1 |
p. 74-75 2 p. |
artikel |