| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for low-concentration phosphorus diffusion by ambient control
|
Gupta, A.K.
|
|
1986
|
29 |
9 |
p. 925-928
4 p.
|
artikel
|
| 2 |
An indirect measurement of energy gap for silicon and germanium
|
Xin, X.K.
|
|
1986
|
29 |
9 |
p. 845-847
3 p.
|
artikel
|
| 3 |
A practical model for growth kinetics of thermal SiO2 on silicon applicable to a wide range of oxide thickness
|
Naito, Masayoshi
|
|
1986
|
29 |
9 |
p. 885-891
7 p.
|
artikel
|
| 4 |
Band bending and interface state density in CdS thin-film MIS structures
|
Saraie, Junji
|
|
1986
|
29 |
9 |
p. 994-995
2 p.
|
artikel
|
| 5 |
Bulk electromigration reliability tests of large-grained aluminum lines with regard to semiconductor contacts
|
Schreiber, H.-U.
|
|
1986
|
29 |
9 |
p. 893-901
9 p.
|
artikel
|
| 6 |
Calculation of the bidimensional electric potential in a polycrystalline semiconductor Schottky junction
|
Mudrik, M.
|
|
1986
|
29 |
9 |
p. 877-881
5 p.
|
artikel
|
| 7 |
Characterization of reacted ohmic contacts to GaAs
|
Kattelus, H.P.
|
|
1986
|
29 |
9 |
p. 903-905
3 p.
|
artikel
|
| 8 |
Comment on the use of the electron temperature concept for nonlinear transport problems in semiconductor p-n junctions
|
Higman, J.
|
|
1986
|
29 |
9 |
p. 915-918
4 p.
|
artikel
|
| 9 |
Editorial - software survey section
|
|
|
1986
|
29 |
9 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K
|
Van Cong, H.
|
|
1986
|
29 |
9 |
p. 857-860
4 p.
|
artikel
|
| 11 |
Electrical influence of pinholes in metal-base transistors
|
Pfister, J.C.
|
|
1986
|
29 |
9 |
p. 907-914
8 p.
|
artikel
|
| 12 |
Electron thermal emission rates of nickel centers in silicon
|
Jaraiz, M.
|
|
1986
|
29 |
9 |
p. 883-884
2 p.
|
artikel
|
| 13 |
Figure of merit for integrated bipolar transistors
|
Taylor, G.W.
|
|
1986
|
29 |
9 |
p. 941-946
6 p.
|
artikel
|
| 14 |
Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures
|
Ling, C.H.
|
|
1986
|
29 |
9 |
p. 995-997
3 p.
|
artikel
|
| 15 |
Image forces and MIS Schottky barriers
|
de Visschere, P.
|
|
1986
|
29 |
9 |
p. 873-875
3 p.
|
artikel
|
| 16 |
InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma
|
Oh, Jae E.
|
|
1986
|
29 |
9 |
p. 933-940
8 p.
|
artikel
|
| 17 |
New method of determination of the flat-band voltage in SOI MOS structures
|
Iniewski, Krzysztof
|
|
1986
|
29 |
9 |
p. 947-950
4 p.
|
artikel
|
| 18 |
Numerical simulation of the charge transfer in GaAs BCCDs
|
Sodini, D.
|
|
1986
|
29 |
9 |
p. 969-976
8 p.
|
artikel
|
| 19 |
On the condition of inversion in an MIS tunnel structure
|
Ash, M.C.
|
|
1986
|
29 |
9 |
p. 991-994
4 p.
|
artikel
|
| 20 |
Physical model of burst noise in thick-film resistors
|
Chen, T.M.
|
|
1986
|
29 |
9 |
p. 865-872
8 p.
|
artikel
|
| 21 |
Reconciliation of Klaassen's and Reimbold's theories of 1/f noise in MOSFETs
|
van der Ziel, A.
|
|
1986
|
29 |
9 |
p. 967-968
2 p.
|
artikel
|
| 22 |
Schottky-barrier lowering on gallium arsenide by submicron ohmic contacts
|
Figueredo, Domingo A.
|
|
1986
|
29 |
9 |
p. 959-965
7 p.
|
artikel
|
| 23 |
Selective detection of deep recombinative centers
|
Dózsa, L.
|
|
1986
|
29 |
9 |
p. 861-863
3 p.
|
artikel
|
| 24 |
Spectral response of an injection-mode infrared detector
|
Coon, D.D.
|
|
1986
|
29 |
9 |
p. 929-931
3 p.
|
artikel
|
| 25 |
The S-model: A highly accurate MOST model for CAD
|
Satter, J.H.
|
|
1986
|
29 |
9 |
p. 977-990
14 p.
|
artikel
|
| 26 |
Trade-off relations for high-voltage switching transistors
|
Kao, Y.C.
|
|
1986
|
29 |
9 |
p. 951-957
7 p.
|
artikel
|
| 27 |
Use of the derivative of the EBIC signal for determining the grain boundary parameters in a polycrystalline solar cell
|
Romanowski, A.
|
|
1986
|
29 |
9 |
p. 849-855
7 p.
|
artikel
|
| 28 |
Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistors
|
Tasselli, J.
|
|
1986
|
29 |
9 |
p. 919-923
5 p.
|
artikel
|
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