| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate MOS measurement procedure for work function difference in the Al/SiO2/Si system
|
Krautschneider, W.H.
|
|
1986
|
29 |
5 |
p. 571-578
8 p.
|
artikel
|
| 2 |
An efficient method for calculating the d.c. triggering currents in CMOS latch-up
|
Chen, Ming-Jer
|
|
1986
|
29 |
5 |
p. 551-554
4 p.
|
artikel
|
| 3 |
An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors
|
Dingfen, Wu
|
|
1986
|
29 |
5 |
p. 489-494
6 p.
|
artikel
|
| 4 |
Anomalies in Schottky diode I−V characteristics
|
Chekir, F.
|
|
1986
|
29 |
5 |
p. 519-522
4 p.
|
artikel
|
| 5 |
A simple regional analysis of transit times in bipolar transistors
|
van den Biesen, J.J.H.
|
|
1986
|
29 |
5 |
p. 529-534
6 p.
|
artikel
|
| 6 |
Bulk electromigration by eliminating grain boundary mass flow in continuous aluminum lines
|
Schreiber, H.-U.
|
|
1986
|
29 |
5 |
p. 545-549
5 p.
|
artikel
|
| 7 |
Classification of macroscopic defects contained in p-type EFG ribbon silicon
|
Ho, C.T.
|
|
1986
|
29 |
5 |
p. 495-503
9 p.
|
artikel
|
| 8 |
Collection efficiency in amorphous silicon solar cells
|
Sen, K.
|
|
1986
|
29 |
5 |
p. 585-588
4 p.
|
artikel
|
| 9 |
Deep states in GaAs LEC crystals
|
Henini, M.
|
|
1986
|
29 |
5 |
p. 483-488
6 p.
|
artikel
|
| 10 |
Editorial - software survey section
|
|
|
1986
|
29 |
5 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Electrical and thermal stability of AuGeNi ohmic contacts to GaAs fabricated with in situ RF sputter cleaning
|
Callegari, A.
|
|
1986
|
29 |
5 |
p. 523-527
5 p.
|
artikel
|
| 12 |
Mobility and concentration of carriers in semi-insulating gallium arsenide
|
Fornari, R.
|
|
1986
|
29 |
5 |
p. 589-590
2 p.
|
artikel
|
| 13 |
Numerical simulation of charge collection in two- and three-dimensional silicon diodes—a comparison
|
Kreskovsky, J.P.
|
|
1986
|
29 |
5 |
p. 505-518
14 p.
|
artikel
|
| 14 |
On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode
|
Chattopadhyay, P.
|
|
1986
|
29 |
5 |
p. 555-560
6 p.
|
artikel
|
| 15 |
Open circuit voltage decay in p-n junction diodes at high levels of injection
|
Jain, S.C.
|
|
1986
|
29 |
5 |
p. 561-570
10 p.
|
artikel
|
| 16 |
Simulation model for a silicon Hall sensor in an absolute digital position detection system
|
Pronk, F.A.
|
|
1986
|
29 |
5 |
p. 579-584
6 p.
|
artikel
|
| 17 |
The contact resistance at the interface between a disc electrode and an infinite slab: Mixed-boundary-value solutions
|
Choo, S.C.
|
|
1986
|
29 |
5 |
p. 535-543
9 p.
|
artikel
|
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