nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A generalized expression for diffusion noise and hot electron noise at arbitrary drift velocities
|
van der Ziel, A. |
|
1986 |
29 |
4 |
p. 465-466 2 p. |
artikel |
2 |
A method for contact resistivity measurement using thick, uniformly doped substrates
|
Winterton, S.S. |
|
1986 |
29 |
4 |
p. 461-464 4 p. |
artikel |
3 |
A model for the charge-pumping current based on small rectangular voltage pulses
|
Wachnik, R.A. |
|
1986 |
29 |
4 |
p. 447-460 14 p. |
artikel |
4 |
An analytic threshold-voltage model for short-channel enhancement mode n-channel MOSFETs with double boron channel implantation
|
Wu, Ching-Yuan |
|
1986 |
29 |
4 |
p. 387-394 8 p. |
artikel |
5 |
An efficient two-dimensional model for CMOS latchup analysis
|
Chen, Ming-Jer |
|
1986 |
29 |
4 |
p. 395-407 13 p. |
artikel |
6 |
Characterization of the switching in tunnel MISS devices
|
Campabadal, F. |
|
1986 |
29 |
4 |
p. 381-385 5 p. |
artikel |
7 |
Current distribution in oscillating mm-wave diodes
|
Luy, J.F. |
|
1986 |
29 |
4 |
p. 471-476 6 p. |
artikel |
8 |
Damage related deep electron levels in ion implanted GaAs
|
Allsopp, D.W.E. |
|
1986 |
29 |
4 |
p. 467-470 4 p. |
artikel |
9 |
Editorial — Software survey section
|
|
|
1986 |
29 |
4 |
p. I-III nvt p. |
artikel |
10 |
Efficiency of gate control in double-interdigitated (TIL) GTO thyristors
|
Silard, A.P. |
|
1986 |
29 |
4 |
p. 437-445 9 p. |
artikel |
11 |
Electrical characteristics of Al/ZnS/p−n + Si diode structures for electroluminescent devices
|
Reehal, H.S. |
|
1986 |
29 |
4 |
p. 429-436 8 p. |
artikel |
12 |
Investigation of the SiSiO2 interface by surface inversion currents
|
Kassabov, J. |
|
1986 |
29 |
4 |
p. 477-482 6 p. |
artikel |
13 |
Proposed size-effect high-electron-mobility transistor
|
Kornreich, Phillipp G. |
|
1986 |
29 |
4 |
p. 421-428 8 p. |
artikel |
14 |
Threshold voltage of small-geometry Si MOSFETs
|
DeMassa, Thomas A. |
|
1986 |
29 |
4 |
p. 409-419 11 p. |
artikel |