| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors
|
Ankri, D.
|
|
1986
|
29 |
2 |
p. 141-149
9 p.
|
artikel
|
| 2 |
As2-ambient activation and alloyed-ohmic-contact studies of Si+-ion-implanted Al0.3Ga0.7As/GaAs modulation-doped structures
|
Mukherjee, S.D.
|
|
1986
|
29 |
2 |
p. 181-187
7 p.
|
artikel
|
| 3 |
CdTe-InSb heterostructures grown by organometallic-vapor-phase epitaxy: Preparation and electrical properties
|
Bhat, I.B.
|
|
1986
|
29 |
2 |
p. 257-260
4 p.
|
artikel
|
| 4 |
Characterization of radiative efficiency in double heterostructures of InGaAsP/InP by photoluminescence intensity analysis
|
Komiya, Satoshi
|
|
1986
|
29 |
2 |
p. 235-240
6 p.
|
artikel
|
| 5 |
Classical magnetoresistance measurements in Al x Ga1−x As/GaAs MODFET structures: Determination of mobilities
|
Look, D.C.
|
|
1986
|
29 |
2 |
p. 159-165
7 p.
|
artikel
|
| 6 |
Comparative study of admittance spectroscopy and DLTS in determining trap levels of CdTe-ZnTe heterojunctions
|
Khan, M.R.H.
|
|
1986
|
29 |
2 |
p. 253-256
4 p.
|
artikel
|
| 7 |
Controlling heterojunction band discontinuities: A surface physicist's approach
|
Margaritondo, G.
|
|
1986
|
29 |
2 |
p. 123-132
10 p.
|
artikel
|
| 8 |
Double-heterostructure InGaAs/InP PIN photodetectors
|
Diadiuk, V.
|
|
1986
|
29 |
2 |
p. 229-233
5 p.
|
artikel
|
| 9 |
Editorial - software survey section
|
|
|
1986
|
29 |
2 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Evaluation of magnesium and manganese as the P-type dopant for InP/InGaAs heterojunction transistors
|
Takeda, Y.
|
|
1986
|
29 |
2 |
p. 241-246
6 p.
|
artikel
|
| 11 |
High-resolution photoluminescence studies of GaAs/GaAlAs multi-quantum-well structures grown by molecular beam epitaxy
|
Bajaj, K.K.
|
|
1986
|
29 |
2 |
p. 215-227
13 p.
|
artikel
|
| 12 |
III–V semiconductors on Si substrates: New directions for heterojunction electronics
|
Fischer, R.
|
|
1986
|
29 |
2 |
p. 269-271
3 p.
|
artikel
|
| 13 |
Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review
|
Bhattacharya, Pallab K.
|
|
1986
|
29 |
2 |
p. 261-267
7 p.
|
artikel
|
| 14 |
Negative differential conductivity of a reverse-biased graded heterojunction
|
Petrosyan, S.G.
|
|
1986
|
29 |
2 |
p. 199-203
5 p.
|
artikel
|
| 15 |
Numerical CML switching analyses for heterojunction GaAs/(GaAl)As bipolar transistors
|
Katoh, Riichi
|
|
1986
|
29 |
2 |
p. 151-157
7 p.
|
artikel
|
| 16 |
On the band offsets of AlGaAs/GaAs and beyond
|
Wang, W.I.
|
|
1986
|
29 |
2 |
p. 133-139
7 p.
|
artikel
|
| 17 |
Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
|
Nathan, Marshall I.
|
|
1986
|
29 |
2 |
p. 167-172
6 p.
|
artikel
|
| 18 |
Photoconductivity in selectively n- and p-doped Al x Ga1−xAs/GaAs heterostructures
|
Schubert, E.F.
|
|
1986
|
29 |
2 |
p. 173-180
8 p.
|
artikel
|
| 19 |
Photovoltaic properties and anomalous effects in the ZnSe-GaAs heterojunction
|
Zhuk, B.V.
|
|
1986
|
29 |
2 |
p. 247-251
5 p.
|
artikel
|
| 20 |
Redistribution of aluminum in MODFET ohmic contacts
|
Christou, A.
|
|
1986
|
29 |
2 |
p. 189-192
4 p.
|
artikel
|
| 21 |
Semiconductor heterojunction topics: Introduction and overview
|
Milnes, A.G.
|
|
1986
|
29 |
2 |
p. 99-121
23 p.
|
artikel
|
| 22 |
Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells
|
Masselink, W.T.
|
|
1986
|
29 |
2 |
p. 205-214
10 p.
|
artikel
|
| 23 |
Special issue on optoelectronics
|
|
|
1986
|
29 |
2 |
p. 272-
1 p.
|
artikel
|
| 24 |
The effect of grading on the electrical behavior of Np AlGaAs/GaAs heterojunction diodes
|
Fischer, R.
|
|
1986
|
29 |
2 |
p. 193-198
6 p.
|
artikel
|
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