| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for IC yield analysis and process control
|
Pesotchinsky, Leon L.
|
|
1986
|
29 |
12 |
p. 1253-1265
13 p.
|
artikel
|
| 2 |
An analytical model for the power bipolar-MOS transistor
|
Kuo, Di-Son
|
|
1986
|
29 |
12 |
p. 1229-1237
9 p.
|
artikel
|
| 3 |
A vertically integrated dynamic RAM-cell: Buried bit line memory cell with floating transfer layer
|
Mouthaan, Ton
|
|
1986
|
29 |
12 |
p. 1289-1294
6 p.
|
artikel
|
| 4 |
Editorial - software survey section
|
|
|
1986
|
29 |
12 |
p. I-III
nvt p.
|
artikel
|
| 5 |
Electron drift velocity versus electric field in GaAs
|
Chang, Chian S.
|
|
1986
|
29 |
12 |
p. 1295-1296
2 p.
|
artikel
|
| 6 |
High-frequency current oscillations in submicron bipolar structures
|
Bannov, N.
|
|
1986
|
29 |
12 |
p. 1207-1211
5 p.
|
artikel
|
| 7 |
High-frequency performance of non-conventional-geometry bipolar transistors
|
Hébert, François
|
|
1986
|
29 |
12 |
p. 1239-1241
3 p.
|
artikel
|
| 8 |
Ionization of impurities in silicon
|
Kuźmicz, Wiesław
|
|
1986
|
29 |
12 |
p. 1223-1227
5 p.
|
artikel
|
| 9 |
List of contents and author index Volume 29, 1986
|
|
|
1986
|
29 |
12 |
p. i-xvi
nvt p.
|
artikel
|
| 10 |
Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance
|
Nguyen-Duc, Ch.
|
|
1986
|
29 |
12 |
p. 1271-1277
7 p.
|
artikel
|
| 11 |
Numerical simulation of temperature-dependent minority-hole transport in n + silicon emitters
|
Yung, S.-Y.
|
|
1986
|
29 |
12 |
p. 1243-1251
9 p.
|
artikel
|
| 12 |
On mobility-fluctuation origin of 1 ƒ noise
|
Pellegrini, B.
|
|
1986
|
29 |
12 |
p. 1279-1287
9 p.
|
artikel
|
| 13 |
Samarium as a Schottky barrier on p-type-silicon
|
Nipoti, R.
|
|
1986
|
29 |
12 |
p. 1267-1270
4 p.
|
artikel
|
| 14 |
Transport of electrons in monolithic hot electron Si transistors
|
Berz, F.
|
|
1986
|
29 |
12 |
p. 1213-1222
10 p.
|
artikel
|
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