| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical solution of poisson's equation for a MOSFET with a gaussian doped channel
|
Das Gupta, A.
|
|
1986
|
29 |
11 |
p. 1205-1206
2 p.
|
artikel
|
| 2 |
An Ebers-Moll model for the heterostructure bipolar transistor
|
Lundstrom, M.S.
|
|
1986
|
29 |
11 |
p. 1173-1179
7 p.
|
artikel
|
| 3 |
A new approach to threshold voltage modelling of short-channel MOSFETS
|
Skotnicki, Tomasz
|
|
1986
|
29 |
11 |
p. 1115-1127
13 p.
|
artikel
|
| 4 |
An extended stream-function method for computer analysis of nonplanar structures
|
Yamaguchi, Ken
|
|
1986
|
29 |
11 |
p. 1129-1136
8 p.
|
artikel
|
| 5 |
Announcements
|
|
|
1986
|
29 |
11 |
p. V-VI
nvt p.
|
artikel
|
| 6 |
Comment on G.J. Rees “surface recombination velocity—a useful concept?”
|
De Visschere, Patrick
|
|
1986
|
29 |
11 |
p. 1161-1165
5 p.
|
artikel
|
| 7 |
Defects introduced in InP by mechanical polishing and studied by means of Au- and Alp-InP Schottky barriers
|
Van den Berghe, L.M.O.
|
|
1986
|
29 |
11 |
p. 1109-1114
6 p.
|
artikel
|
| 8 |
Editorial — Software survey section
|
|
|
1986
|
29 |
11 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Electrical characterization of p +/n shallow junctions obtained by boron implantation into preamorphized silicon
|
Landi, E.
|
|
1986
|
29 |
11 |
p. 1181-1187
7 p.
|
artikel
|
| 10 |
Electromigration behaviour of SiO2-covered, large-grained, narrow AlSi lines with ohmic contacts
|
Schreiber, H.-U.
|
|
1986
|
29 |
11 |
p. 1167-1172
6 p.
|
artikel
|
| 11 |
General considerations for interpreting junction capacitance in complex systems
|
Shiau, Jeng-Jye
|
|
1986
|
29 |
11 |
p. 1153-1160
8 p.
|
artikel
|
| 12 |
High-sensitivity MOS varactor
|
Rao, P.R.S.
|
|
1986
|
29 |
11 |
p. 1137-1144
8 p.
|
artikel
|
| 13 |
Observations of dislocations and junction irregularities in bipolar transistors using the OBIC mode of the scanning optical microscope
|
Wilson, T.
|
|
1986
|
29 |
11 |
p. 1189-1194
6 p.
|
artikel
|
| 14 |
Optical and thermal cross-section of interface states from photocapacitance measurements
|
Morante, J.R.
|
|
1986
|
29 |
11 |
p. 1195-1203
9 p.
|
artikel
|
| 15 |
The frequency spectrum of reciprocal capacitance and its derivative in MOS systems
|
Xu, Mingzhen
|
|
1986
|
29 |
11 |
p. 1145-1151
7 p.
|
artikel
|
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