nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A characterization model for ramp-voltage-stressed I-V characteristics of thin thermal oxides grown on silicon substrate
|
Chiou-Feng Chen, |
|
1986 |
29 |
10 |
p. 1059-1068 10 p. |
artikel |
2 |
Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization
|
Graffeuil, J. |
|
1986 |
29 |
10 |
p. 1087-1097 11 p. |
artikel |
3 |
Correlations between CMOS latch-up characteristics and substrate structure parameters
|
Ming-Jer Chen, |
|
1986 |
29 |
10 |
p. 1079-1086 8 p. |
artikel |
4 |
Editorial - Software survey section
|
|
|
1986 |
29 |
10 |
p. I-III nvt p. |
artikel |
5 |
Effects of high-field stressing on the channel frequency-response of MOSFETs
|
Chow, P.D. |
|
1986 |
29 |
10 |
p. 1005-1014 10 p. |
artikel |
6 |
High level boundary conditions in the space-charge region of a PN junction
|
Fortini, A. |
|
1986 |
29 |
10 |
p. 1107-1108 2 p. |
artikel |
7 |
Negative-resistance field-effect transistor grown by organometallic chemical vapor deposition
|
Kastalsky, A. |
|
1986 |
29 |
10 |
p. 1073-1077 5 p. |
artikel |
8 |
Planar termination for high-voltage p-n junctions
|
Georgescu, S. |
|
1986 |
29 |
10 |
p. 1035-1039 5 p. |
artikel |
9 |
Shot noise in solid state diodes
|
van der Ziel, Alder |
|
1986 |
29 |
10 |
p. 1069-1071 3 p. |
artikel |
10 |
Shunt resistance and soft reverse characteristics of silicon diffused-junction solar cells
|
Lal, R. |
|
1986 |
29 |
10 |
p. 1015-1023 9 p. |
artikel |
11 |
Simplified three-dimensional computer simulation formulae for film thickness distribution in the LPCVD process
|
Ji-Tao Wang, |
|
1986 |
29 |
10 |
p. 999-1004 6 p. |
artikel |
12 |
Simulation of the accumulation-punchthrough mode in depletion MOSFETs
|
Tarasewicz, S.W. |
|
1986 |
29 |
10 |
p. 1025-1033 9 p. |
artikel |
13 |
The effect of channel hot electron stress on a.c. device characteristics of MOSFETs
|
Kalnitsky, A. |
|
1986 |
29 |
10 |
p. 1053-1057 5 p. |
artikel |
14 |
The effect of subband quantization in the 2-D electron gas on thermionic current and heterojunction capacitance in an n-Al x Ga1−xAs/n-GaAs heterojunction
|
Greenwald, Z. |
|
1986 |
29 |
10 |
p. 1099-1106 8 p. |
artikel |
15 |
The effect of thermal and radiation defects on the recombination properties of the base region of diffused silicon p-n structures
|
Kuchinskii, P.V. |
|
1986 |
29 |
10 |
p. 1041-1051 11 p. |
artikel |