| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Carrier recombination at grain boundaries in polycrystalline silicon under optical illumination
|
Joshi, D.P.
|
|
1986
|
29 |
1 |
p. 19-24
6 p.
|
artikel
|
| 2 |
Conduction mechanisms in Pd/SiO2/n-Si Schottky diode hydrogen detectors
|
Petty, M.C.
|
|
1986
|
29 |
1 |
p. 89-97
9 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1986
|
29 |
1 |
p. IFC-
1 p.
|
artikel
|
| 4 |
Editorial—software survey section
|
|
|
1986
|
29 |
1 |
p. I-III
nvt p.
|
artikel
|
| 5 |
High quality thick epitaxial films for power semiconductor devices
|
Chang, Hsueh-Rong
|
|
1986
|
29 |
1 |
p. 39-46
8 p.
|
artikel
|
| 6 |
Hypothesis to explain pressure effects on resistivity in semiconductive barium titanate ceramics
|
Janega, P.L.
|
|
1986
|
29 |
1 |
p. 59-66
8 p.
|
artikel
|
| 7 |
Improved variational method for spreading resistance calculations
|
Leong, M.S.
|
|
1986
|
29 |
1 |
p. 67-74
8 p.
|
artikel
|
| 8 |
Influence of hydrogen implantation on properties of n + p polycrystalline silicon solar cells
|
Ammor, L.
|
|
1986
|
29 |
1 |
p. 1-6
6 p.
|
artikel
|
| 9 |
Integral expression for 1/tf noise in mosfets at arbitrary drain bias
|
Van der Ziel, A.
|
|
1986
|
29 |
1 |
p. 29-30
2 p.
|
artikel
|
| 10 |
Nondestructive evaluation of the semiconductor interface states' density using the transverse acoustoelectric voltage
|
Davari, B.
|
|
1986
|
29 |
1 |
p. 75-81
7 p.
|
artikel
|
| 11 |
On the carrier emission from donor-related centres in GaAs1-x P x and AlxGa1-xAs
|
Calleja, Enrique
|
|
1986
|
29 |
1 |
p. 83-88
6 p.
|
artikel
|
| 12 |
Preparation, characteristics and photovoltaic properties of cuprous oxide—a review
|
Rakhshani, A.E.
|
|
1986
|
29 |
1 |
p. 7-17
11 p.
|
artikel
|
| 13 |
Static and dynamic analysis of amorphous-silicon field-effect transistors
|
Leroux, T.
|
|
1986
|
29 |
1 |
p. 47-58
12 p.
|
artikel
|
| 14 |
Surface-wave instability in helicon wave propagation in layered structures
|
Kushwaha, Manvir S.
|
|
1986
|
29 |
1 |
p. 31-37
7 p.
|
artikel
|
| 15 |
The effects of a sacrificial oxide process on metal—oxide—semiconductor field effect transistors fabricated with ion-beam-nitridation technology
|
Lee, Han-Sheng
|
|
1986
|
29 |
1 |
p. 25-28
4 p.
|
artikel
|
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