| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of properties of homojunction, single heterojunction and double heterojunction PbS1−xSex diode lasers
|
Qadeer, A.
|
|
1984
|
27 |
8-9 |
p. 733-740
8 p.
|
artikel
|
| 2 |
Admittance of gallium arsenide p + n diodes with lateral base contact
|
Lehovec, K.
|
|
1984
|
27 |
8-9 |
p. 785-795
11 p.
|
artikel
|
| 3 |
An analysis of interconnect line capacitance and coupling for VLSI circuits
|
Lewis, E.T.
|
|
1984
|
27 |
8-9 |
p. 741-749
9 p.
|
artikel
|
| 4 |
An improved approach to electroless copper deposition on non-conducting substrates
|
Vijayaraghavan, M.S.
|
|
1984
|
27 |
8-9 |
p. 828-829
2 p.
|
artikel
|
| 5 |
A reassessment of TRAPATT theory—I. Charge production and device design
|
Blakey, Peter A.
|
|
1984
|
27 |
8-9 |
p. 751-761
11 p.
|
artikel
|
| 6 |
Buried-channel MOS transistor with punch-through
|
Wilamowski, Bogdan M.
|
|
1984
|
27 |
8-9 |
p. 811-815
5 p.
|
artikel
|
| 7 |
Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate
|
Sekigawa, T.
|
|
1984
|
27 |
8-9 |
p. 827-828
2 p.
|
artikel
|
| 8 |
Device isolation by oxygen implantation in n-type indium phosphide
|
Thompson, P.E.
|
|
1984
|
27 |
8-9 |
p. 817-818
2 p.
|
artikel
|
| 9 |
Erratum
|
|
|
1984
|
27 |
8-9 |
p. 831-
1 p.
|
artikel
|
| 10 |
Erratum
|
|
|
1984
|
27 |
8-9 |
p. 831-
1 p.
|
artikel
|
| 11 |
Error analysis in Newton-Sor computer simulation of semiconductor devices
|
Wang, Cheng T.
|
|
1984
|
27 |
8-9 |
p. 763-767
5 p.
|
artikel
|
| 12 |
Estimation of multiplication in avalanche transistors
|
Chakrabarti, N.B.
|
|
1984
|
27 |
8-9 |
p. 819-820
2 p.
|
artikel
|
| 13 |
Frequency response of avalanche photodiodes using an equivalent network representation
|
Rakshit, S.
|
|
1984
|
27 |
8-9 |
p. 807-810
4 p.
|
artikel
|
| 14 |
High temperature annealing behavior of electron traps in thermal SiO2
|
Balk, P.
|
|
1984
|
27 |
8-9 |
p. 709-719
11 p.
|
artikel
|
| 15 |
I–V characteristics of polysilicon resistors at high electric field and the non-uniform conduction mechanism
|
Lu, Nicky Chau-Chun
|
|
1984
|
27 |
8-9 |
p. 797-805
9 p.
|
artikel
|
| 16 |
Modeling gate modulation effects on FET electrical characteristics with arbitrary doping profiles
|
Chiang, Min-Wen
|
|
1984
|
27 |
8-9 |
p. 701-707
7 p.
|
artikel
|
| 17 |
Modelling pin diode switch off with the enthalpy method
|
Berz, F.
|
|
1984
|
27 |
8-9 |
p. 769-774
6 p.
|
artikel
|
| 18 |
On the flat-band voltage of MOS structures on nonuniformly doped substrates
|
Van de Wiele, F.
|
|
1984
|
27 |
8-9 |
p. 824-826
3 p.
|
artikel
|
| 19 |
Publisher's notice to authors and subscribers
|
|
|
1984
|
27 |
8-9 |
p. i-
1 p.
|
artikel
|
| 20 |
Quasi-fermi levels in MSM structure
|
Małachowski, M.J.
|
|
1984
|
27 |
8-9 |
p. 820-823
4 p.
|
artikel
|
| 21 |
Small-signal MOSFET one-dimensional admittance model
|
Zhang Yimen,
|
|
1984
|
27 |
8-9 |
p. 721-731
11 p.
|
artikel
|
| 22 |
Software Survey Section:MOSFET
|
|
|
1984
|
27 |
8-9 |
p. I-III
nvt p.
|
artikel
|
| 23 |
Spreading thermal resistance of the heat-sink of a light-emitting diode
|
Nakwaski, Wlodzimierz
|
|
1984
|
27 |
8-9 |
p. 823-824
2 p.
|
artikel
|
| 24 |
Theory of switching in polysilicon n-p + structures
|
Darwish, M.
|
|
1984
|
27 |
8-9 |
p. 775-783
9 p.
|
artikel
|
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