| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A.C. field effect study on PbTe films grown by hot wall epitaxy technique
|
Vaya, P.R.
|
|
1984
|
27 |
6 |
p. 553-556
4 p.
|
artikel
|
| 2 |
Amorphous metal-semiconductor contacts for high temperature electronics—II Thermal stability of Schottky barrier characteristics
|
Wickenden, D.K.
|
|
1984
|
27 |
6 |
p. 515-518
4 p.
|
artikel
|
| 3 |
Amorphous metal-semiconductor contacts for high temperature electronics—I Materials and characterisation
|
Todd, A.G.
|
|
1984
|
27 |
6 |
p. 507-513
7 p.
|
artikel
|
| 4 |
A new formulation of the early effect in epitaxial bipolar transistors
|
Bodinaud, Jean Albert
|
|
1984
|
27 |
6 |
p. 519-525
7 p.
|
artikel
|
| 5 |
An extension of the ideal diode analysis for the heavily doped p-n diode
|
Teng, K.W.
|
|
1984
|
27 |
6 |
p. 595-599
5 p.
|
artikel
|
| 6 |
Anomalous light sensitivity of organometallic VPE Al x Ga1−x As
|
Subramanian, S.
|
|
1984
|
27 |
6 |
p. 527-531
5 p.
|
artikel
|
| 7 |
A simple model for computer simulation of Schottky-barrier diodes
|
Guo, S.F.
|
|
1984
|
27 |
6 |
p. 537-543
7 p.
|
artikel
|
| 8 |
Editorial—Software survey section
|
|
|
1984
|
27 |
6 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Interaction between zinc metallization and indium phosphide
|
Nakahara, S.
|
|
1984
|
27 |
6 |
p. 557-564
8 p.
|
artikel
|
| 10 |
On the injection level dependence of the minority carrier lifetime in defected silicon substrates
|
De Pauw, P.
|
|
1984
|
27 |
6 |
p. 573-587
15 p.
|
artikel
|
| 11 |
Optimization of process and device characteristics for MOSFETs by using the BFGS method
|
Yokoyama, Kiyoyuki
|
|
1984
|
27 |
6 |
p. 545-551
7 p.
|
artikel
|
| 12 |
The role of intercarrier scattering in excited silicon
|
Grivitskas, V.
|
|
1984
|
27 |
6 |
p. 565-572
8 p.
|
artikel
|
| 13 |
Two-carrier conduction in MOS tunnel oxides—1 Experimental results
|
Hsueh, F.L.
|
|
1984
|
27 |
6 |
p. 499-505
7 p.
|
artikel
|
| 14 |
Unique phenomena in SnO2-based gas sensing devices exposed to ammonia gas
|
Kanefusa, Shinji
|
|
1984
|
27 |
6 |
p. 533-536
4 p.
|
artikel
|
| 15 |
XPS analysis of (100) GaAs surfaces after applying a variety of technology-etchants
|
Huber, E.
|
|
1984
|
27 |
6 |
p. 589-594
6 p.
|
artikel
|
Tijdschrift beschrijving