| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A modeling technique for characterizing ion-implanted material using C–V and DLTS data
|
Golio, J.M.
|
|
1984
|
27 |
4 |
p. 367-373
7 p.
|
artikel
|
| 2 |
A suggested method for the determination of the charge density in the interfacial layer of a schottky-barrier MIS diode
|
Daw, A.N.
|
|
1984
|
27 |
4 |
p. 393-
1 p.
|
artikel
|
| 3 |
Changes in breakdown characteristics of planar Al/nSi Schottky diodes during the postmetallization heat treatment
|
Dascalu, D.
|
|
1984
|
27 |
4 |
p. 359-365
7 p.
|
artikel
|
| 4 |
Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices
|
Akcasu, Osman Ersed
|
|
1984
|
27 |
4 |
p. 319-328
10 p.
|
artikel
|
| 5 |
Editorial—Software section
|
|
|
1984
|
27 |
4 |
p. 397-398
2 p.
|
artikel
|
| 6 |
Electrical characteristics of r.f.-sputtered CdTe thin-films for photovoltaic applications
|
Das, M.B.
|
|
1984
|
27 |
4 |
p. 329-337
9 p.
|
artikel
|
| 7 |
Equivalent circuit and minority carrier lifetime in heterostructure light emitting diodes
|
Atallah, K.
|
|
1984
|
27 |
4 |
p. 375-380
6 p.
|
artikel
|
| 8 |
High field transport in GaAs, InP and InAs
|
Brennan, Kevin
|
|
1984
|
27 |
4 |
p. 347-357
11 p.
|
artikel
|
| 9 |
High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures
|
Khan, A.Azim
|
|
1984
|
27 |
4 |
p. 385-391
7 p.
|
artikel
|
| 10 |
Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes
|
Elfsten, B.
|
|
1984
|
27 |
4 |
p. 317-318
2 p.
|
artikel
|
| 11 |
In situ X-ray diffraction study of melting in gold contacts to gallium arsenide
|
Zeng, Xian-Fu
|
|
1984
|
27 |
4 |
p. 339-345
7 p.
|
artikel
|
| 12 |
Method for reduction of hysteresis effects in MIS measurements
|
Heilig, K.
|
|
1984
|
27 |
4 |
p. 395-396
2 p.
|
artikel
|
| 13 |
On the current-voltage characteristics of epitaxial Schottky barrier diodes
|
Chuang, C.T.
|
|
1984
|
27 |
4 |
p. 299-304
6 p.
|
artikel
|
| 14 |
Temperature distribution and power dissipation in MOSFETs
|
Schütz, A.
|
|
1984
|
27 |
4 |
p. 394-395
2 p.
|
artikel
|
| 15 |
The consequences of the application of a floating gate on d.c.-MISFET characteristics
|
Voorthuyzen, J.A.
|
|
1984
|
27 |
4 |
p. 311-315
5 p.
|
artikel
|
| 16 |
The correlation of channel mobility with interface state measurements on InP MOSFET structures
|
Cameron, D.C.
|
|
1984
|
27 |
4 |
p. 305-309
5 p.
|
artikel
|
| 17 |
Use of the modulating differentiation technique to study breakdown inhomogeneities in avalanche transit time silicon diode
|
Konakova, R.V.
|
|
1984
|
27 |
4 |
p. 381-383
3 p.
|
artikel
|
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