nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A current conduction mechanism in laser recrystallized silicon metal-oxide-semiconductor transistors
|
Lee, Han-Sheng |
|
1984 |
27 |
3 |
p. 241-245 5 p. |
artikel |
2 |
Analysis of LED degradation; proton-bombarded GaAs
|
't Hooft, G.W. |
|
1984 |
27 |
3 |
p. 253-259 7 p. |
artikel |
3 |
Announcement
|
|
|
1984 |
27 |
3 |
p. 293- 1 p. |
artikel |
4 |
Anode domain transient processes in supercritical Gunn diodes
|
Kireev, O.A. |
|
1984 |
27 |
3 |
p. 233-239 7 p. |
artikel |
5 |
Computer analysis of induced-inversion layer MOS solar cells
|
Yeh, Dah-Kwang |
|
1984 |
27 |
3 |
p. 283-292 10 p. |
artikel |
6 |
Current-voltage and light-voltage relations for the linear-graded pn junction
|
van Opdorp, C. |
|
1984 |
27 |
3 |
p. 261-266 6 p. |
artikel |
7 |
Editorial—Software section
|
|
|
1984 |
27 |
3 |
p. 297-298 2 p. |
artikel |
8 |
Effective lifetimes in high quality silicon devices
|
Schroder, D.K. |
|
1984 |
27 |
3 |
p. 247-251 5 p. |
artikel |
9 |
Erratum
|
|
|
1984 |
27 |
3 |
p. 295- 1 p. |
artikel |
10 |
Model for the frequency-dependence of the capacitance in CdSCu2S solar cells
|
Vandendriessche, L. |
|
1984 |
27 |
3 |
p. 275-282 8 p. |
artikel |
11 |
Properties of metal-semiconductor contacts—II
|
Moreau, Y. |
|
1984 |
27 |
3 |
p. 225-231 7 p. |
artikel |
12 |
Theory for voltage dependent series resistance in silicon solar cells
|
Dhariwal, S.R. |
|
1984 |
27 |
3 |
p. 267-273 7 p. |
artikel |
13 |
Two-dimensional transient analysis of a buried-channel charge-coupled device
|
Hsieh, H.C. |
|
1984 |
27 |
3 |
p. 213-224 12 p. |
artikel |