| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A contribution to the theory of the open-circuit photovoltage of an abrupt p-n junction
|
de Visschere, P.
|
|
1984
|
27 |
2 |
p. 131-136
6 p.
|
artikel
|
| 2 |
Characterization of dark current non-uniformities in charge-coupled devices
|
van der Spiegel, J.
|
|
1984
|
27 |
2 |
p. 147-154
8 p.
|
artikel
|
| 3 |
Diffused junction p +−n solar cells in bulk GaAs—I
|
Bhat, I.
|
|
1984
|
27 |
2 |
p. 121-125
5 p.
|
artikel
|
| 4 |
Diffused junction p +−n solar cells in bulk GaAs—II
|
Keeney, R.
|
|
1984
|
27 |
2 |
p. 127-130
4 p.
|
artikel
|
| 5 |
Diffusion length and grain-boundary recombination velocity measurements with the scanning electron microscope in a finite polysilicon grain
|
Sundaresan, R.
|
|
1984
|
27 |
2 |
p. 177-185
9 p.
|
artikel
|
| 6 |
Electron temperature dependences of nonradiative multiphonon hot-electron capture coefficients of deep traps in semiconductors—I
|
Pässler, R.
|
|
1984
|
27 |
2 |
p. 155-166
12 p.
|
artikel
|
| 7 |
Numerical and experimental study of surface effects on GaAs planar photoconductors
|
Vaterkowski, J.L.
|
|
1984
|
27 |
2 |
p. 207-209
3 p.
|
artikel
|
| 8 |
On speeding-up of iteration convergence in semiconductor problems
|
Polsky, B.S.
|
|
1984
|
27 |
2 |
p. 191-194
4 p.
|
artikel
|
| 9 |
On the properties of InSb quantum wells
|
van Welzenis, R.G.
|
|
1984
|
27 |
2 |
p. 113-120
8 p.
|
artikel
|
| 10 |
Photoconductivity and photomagnetoelectric effect of SiGaAs in the presence of different surface recombination regimes
|
Girard, P.
|
|
1984
|
27 |
2 |
p. 195-201
7 p.
|
artikel
|
| 11 |
Solution growth of silicon from liquid tin for application to photovoltaic solar cells
|
Possin, G.E.
|
|
1984
|
27 |
2 |
p. 167-176
10 p.
|
artikel
|
| 12 |
Structural effects of heating gold-based contacts to gallium phosphide
|
Ginley, Ronald A.
|
|
1984
|
27 |
2 |
p. 137-146
10 p.
|
artikel
|
| 13 |
The dielectric strength of CO2 laser grown silicon dioxide
|
Boyd, I.W.
|
|
1984
|
27 |
2 |
p. 209-211
3 p.
|
artikel
|
| 14 |
The metal-insulator-semiconductor-switch (MISS) device using thermal nitride film as the tunneling insulator
|
Wu, Ching-Yuan
|
|
1984
|
27 |
2 |
p. 203-206
4 p.
|
artikel
|
| 15 |
Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product
|
Kowalsky, W.
|
|
1984
|
27 |
2 |
p. 187-189
3 p.
|
artikel
|
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