| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A loss mechanism in MIS solar cells associated with the creation of energetic carriers
|
Heasell, E.L.
|
|
1984
|
27 |
12 |
p. 1091-1095
5 p.
|
article
|
| 2 |
An interactive two-dimensinal finite element process modelling package for a single user mini-computer
|
Ferguson, R.S.
|
|
1984
|
27 |
12 |
p. 1043-1054
12 p.
|
article
|
| 3 |
A simplified parabolic structure for narrow-gap semiconductors in the presence of quantizing magnetic fields
|
Abidi, S.T.H.
|
|
1984
|
27 |
12 |
p. 1153-1155
3 p.
|
article
|
| 4 |
Call for papers
|
|
|
1984
|
27 |
12 |
p. 1159-1160
2 p.
|
article
|
| 5 |
Comment on the paper entitled “characterization of the interface states at AlGaAs Schottky barriers with a thin interface layer”
|
Van Meirhaeghe, R.L.
|
|
1984
|
27 |
12 |
p. 1157-
1 p.
|
article
|
| 6 |
C-V profiling of steep dopant distributions
|
Lehovec, K.
|
|
1984
|
27 |
12 |
p. 1097-1105
9 p.
|
article
|
| 7 |
Determination of potential at the beveled interface between two materials
|
Le Helley, M.
|
|
1984
|
27 |
12 |
p. 1123-1125
3 p.
|
article
|
| 8 |
Determination of the active-layer temperature near the channel of GaAs MESFET's
|
Bourbonnais, L.
|
|
1984
|
27 |
12 |
p. 1141-1147
7 p.
|
article
|
| 9 |
Effect of inversion on barrier height in a metal-SiO2-Si tunnel system
|
Daw, A.N.
|
|
1984
|
27 |
12 |
p. 1057-1060
4 p.
|
article
|
| 10 |
Fabrication of p +-n junction GaAs solar cells by a novel method
|
Ghandhi, S.K.
|
|
1984
|
27 |
12 |
p. 1149-1150
2 p.
|
article
|
| 11 |
Flicker noise in hot electron degraded short channel MOSFETs
|
Stegherr, M.
|
|
1984
|
27 |
12 |
p. 1055-1056
2 p.
|
article
|
| 12 |
Numerical simulation of hot-electron effects on source-drain burnout characteristics of GaAs power FETs
|
Buot, F.A.
|
|
1984
|
27 |
12 |
p. 1067-1081
15 p.
|
article
|
| 13 |
Publisher's notice to authors and subscribers
|
|
|
1984
|
27 |
12 |
p. I-
1 p.
|
article
|
| 14 |
Publisher's notice to authors and subscribers
|
|
|
1984
|
27 |
12 |
p. i-
1 p.
|
article
|
| 15 |
Re-assessment of electron mobility and conduction-band deformation potential in indium phosphide
|
Takeda, Y.
|
|
1984
|
27 |
12 |
p. 1127-1129
3 p.
|
article
|
| 16 |
Recombination in germanium: Voltage-decay experiments on induced-junction devices and validity of the SRH model
|
Hsieh, Y.K.
|
|
1984
|
27 |
12 |
p. 1061-1066
6 p.
|
article
|
| 17 |
Reply to comment on “characterization of the interface states at AlGaAs Schottky barriers with a thin interface layer”
|
Morante, J.R.
|
|
1984
|
27 |
12 |
p. 1157-
1 p.
|
article
|
| 18 |
Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenide
|
Cheng, H.
|
|
1984
|
27 |
12 |
p. 1117-1122
6 p.
|
article
|
| 19 |
Surface cracking in gold-silicon alloys
|
Johnson, David N.
|
|
1984
|
27 |
12 |
p. 1107-
1 p.
|
article
|
| 20 |
Thermionic emission-diffusion theory of isotype heterojunctions
|
Schuelke, R.J.
|
|
1984
|
27 |
12 |
p. 1111-1116
6 p.
|
article
|
| 21 |
Two-carrier conduction in MOS tunnel—Oxides II—Theory
|
Simmons, J.G.
|
|
1984
|
27 |
12 |
p. 1131-1139
9 p.
|
article
|
| 22 |
Ultra-small punchthrough MOSFET
|
Grossman, B.M.
|
|
1984
|
27 |
12 |
p. 1083-1090
8 p.
|
article
|
Journal description