| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Admittance spectroscopy of traps in AuInSe Schottky cells
|
Di Giulio, M.
|
|
1984
|
27 |
11 |
p. 1015-1019
5 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1984
|
27 |
11 |
p. 1041-
1 p.
|
artikel
|
| 3 |
A self-consistent approach to Fowler plots
|
de Sousa Pires, J.
|
|
1984
|
27 |
11 |
p. 1029-1032
4 p.
|
artikel
|
| 4 |
Call for papers
|
|
|
1984
|
27 |
11 |
p. 1039-
1 p.
|
artikel
|
| 5 |
Comments on “generalised theory of conduction in Schottky barriers”
|
Simeonov, S.S.
|
|
1984
|
27 |
11 |
p. 1035-1036
2 p.
|
artikel
|
| 6 |
Comments on “generalized theory of conduction in Schottky barriers”
|
Rhoderick, E.H.
|
|
1984
|
27 |
11 |
p. 1035-
1 p.
|
artikel
|
| 7 |
Determination of the potential barrier height in barium titanate ceramics
|
Kuwabara, M.
|
|
1984
|
27 |
11 |
p. 929-935
7 p.
|
artikel
|
| 8 |
Digital implementation of the Q-C method for MOS measurements
|
Boulin, D.M.
|
|
1984
|
27 |
11 |
p. 977-988
12 p.
|
artikel
|
| 9 |
Editorial—Software survey section
|
|
|
1984
|
27 |
11 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Improved MOS capacitor measurements using the Q-C method
|
Brews, J.R.
|
|
1984
|
27 |
11 |
p. 963-975
13 p.
|
artikel
|
| 11 |
Instrumentation and analog implementation of the Q-C method for MOS measurements
|
Nicollian, E.H.
|
|
1984
|
27 |
11 |
p. 953-962
10 p.
|
artikel
|
| 12 |
Low-frequency noise characteristics of Gallium Arsenide MESFETs
|
Rucker, L.M.
|
|
1984
|
27 |
11 |
p. 947-948
2 p.
|
artikel
|
| 13 |
Low-frequency noise in Gallium Arsenide MESFETs
|
Duh, K.H.
|
|
1984
|
27 |
11 |
p. 1003-1013
11 p.
|
artikel
|
| 14 |
Low-frequency noise in gallium arsenide structures
|
Hellums, J.R.
|
|
1984
|
27 |
11 |
p. 949-952
4 p.
|
artikel
|
| 15 |
Modification of most I-V characteristics by self-heating
|
Sharma, Dinesh K.
|
|
1984
|
27 |
11 |
p. 989-994
6 p.
|
artikel
|
| 16 |
Numerical analysis of multiple field limiting ring systems
|
Wright, K.R.
|
|
1984
|
27 |
11 |
p. 1021-1027
7 p.
|
artikel
|
| 17 |
On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs
|
Wu, E.N.
|
|
1984
|
27 |
11 |
p. 945-946
2 p.
|
artikel
|
| 18 |
On the semi-insulating polycrystalline silicon resistor
|
Lee, Ming-Kwang
|
|
1984
|
27 |
11 |
p. 995-1001
7 p.
|
artikel
|
| 19 |
Publisher's notice to authors and subscribers
|
|
|
1984
|
27 |
11 |
p. i-
1 p.
|
artikel
|
| 20 |
Remarks on “comments on ‘generalized theory of conduction in Schottky barriers‘”
|
Simmons, J.G.
|
|
1984
|
27 |
11 |
p. 1036-1037
2 p.
|
artikel
|
| 21 |
Schottky barrier ideality, real and imagined
|
Henisch, H.K.
|
|
1984
|
27 |
11 |
p. 1033-1034
2 p.
|
artikel
|
| 22 |
Switching characteristics of polysilicon MISS devices
|
Martínez, J.
|
|
1984
|
27 |
11 |
p. 937-944
8 p.
|
artikel
|
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