| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation
|
Wu, Ching-Yuan
|
|
1983
|
26 |
9 |
p. 893-900
8 p.
|
artikel
|
| 2 |
A lambda-type current-controlled negative resistance device
|
Yi, Ming-Guang
|
|
1983
|
26 |
9 |
p. 875-877
3 p.
|
artikel
|
| 3 |
Alternate explanation of 1 f noise in ion-implanted MOSFETs
|
van der Ziel, A.
|
|
1983
|
26 |
9 |
p. 927-928
2 p.
|
artikel
|
| 4 |
An EBIC equation for solar cells
|
Luke, Keung L.
|
|
1983
|
26 |
9 |
p. 901-906
6 p.
|
artikel
|
| 5 |
An effect of semiconductor surface shape on gate breakdown voltage of a VMOS transistor
|
Sekigawa, T.
|
|
1983
|
26 |
9 |
p. 925-927
3 p.
|
artikel
|
| 6 |
A novel approach to silicon gate CMOS device scaling
|
King, Jan H.
|
|
1983
|
26 |
9 |
p. 879-881
3 p.
|
artikel
|
| 7 |
A time-dependent and two-dimensional numerical model for MOSFET device operation
|
Yamaguchi, Ken
|
|
1983
|
26 |
9 |
p. 907-916
10 p.
|
artikel
|
| 8 |
Correlation impedance in transistors at high injection
|
Van der Ziel, A.
|
|
1983
|
26 |
9 |
p. 873-874
2 p.
|
artikel
|
| 9 |
Drain-voltage effects on the threshold voltage of a small-geometry MOSFET
|
Chao, C.S.
|
|
1983
|
26 |
9 |
p. 851-860
10 p.
|
artikel
|
| 10 |
Lowering of the breakdown voltage of silicon dioxide by asperities and at spherical electrodes
|
Klein, N.
|
|
1983
|
26 |
9 |
p. 883-892
10 p.
|
artikel
|
| 11 |
Low-frequency noise in GaAs current limiters
|
Peczalski, A.
|
|
1983
|
26 |
9 |
p. 861-872
12 p.
|
artikel
|
| 12 |
Numerical analysis of the sheet resistance of ion-implanted phosphorus layers in silicon
|
Schmucker, R.F.
|
|
1983
|
26 |
9 |
p. 923-925
3 p.
|
artikel
|
| 13 |
Proper choice of measuring frequency for detemining f T of bipolar transistor
|
|
|
1983
|
26 |
9 |
p. 929-
1 p.
|
artikel
|
| 14 |
Serial-layered-transmission line contact-resistance representation for partially-overlaid Al-to-contacts to silicon
|
Sugerman, A.
|
|
1983
|
26 |
9 |
p. 917-922
6 p.
|
artikel
|
| 15 |
Study of deep-level defects and annealing effects in undoped and Sn-doped GaAs solar cells irradiated by one-MeV electrons
|
Li, S.S.
|
|
1983
|
26 |
9 |
p. 835-840
6 p.
|
artikel
|
| 16 |
Surface recombination statistics at traps
|
Landsberg, P.T.
|
|
1983
|
26 |
9 |
p. 841-849
9 p.
|
artikel
|
| 17 |
The use of spatially-dependent carrier capture rates for deep-level-defect transient studies
|
Li, G.P.
|
|
1983
|
26 |
9 |
p. 825-833
9 p.
|
artikel
|
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