| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical solutions for threshold voltage calculations in ion-implanted IGFETs
|
Shenai, K.
|
|
1983
|
26 |
8 |
p. 761-766
6 p.
|
artikel
|
| 2 |
An efficient numerical scheme for spreading resistance calculations based on the variational method
|
Choo, S.C.
|
|
1983
|
26 |
8 |
p. 723-730
8 p.
|
artikel
|
| 3 |
Blocking capability of planar devices with field limiting rings
|
Brieger, K.-P.
|
|
1983
|
26 |
8 |
p. 739-745
7 p.
|
artikel
|
| 4 |
Damaged-induced isolation in n-type InP by light-ion implantation
|
Thompson, P.E.
|
|
1983
|
26 |
8 |
p. 805-810
6 p.
|
artikel
|
| 5 |
Diffusion of zinc into ion implanted iron doped indium phosphide
|
Favennec, P.N.
|
|
1983
|
26 |
8 |
p. 771-775
5 p.
|
artikel
|
| 6 |
Effect of the velocity-field peak on I–V characteristics of GaAs FET's
|
Chaudhuri, S.
|
|
1983
|
26 |
8 |
p. 811-814
4 p.
|
artikel
|
| 7 |
Formation of nickel and palladium silicides by a short-pulse light-flash and its application in the metallization of solar cells
|
Lue, Juh Tzeng
|
|
1983
|
26 |
8 |
p. 787-793
7 p.
|
artikel
|
| 8 |
Gate current flow in cylindrical thyristors with partially shorted cathodes—two and three terminal operation with inner and outer gate configuration—turn-on area
|
Fulop, W.
|
|
1983
|
26 |
8 |
p. 777-784
8 p.
|
artikel
|
| 9 |
High-frequency admittance of high-electron-mobility transistors (HEMTs)
|
van der Ziel, A.
|
|
1983
|
26 |
8 |
p. 753-754
2 p.
|
artikel
|
| 10 |
Interpretation of a non-conventional reverse-current curve of a depletion-type gate-controlled diode
|
Swart, Jacobus W.
|
|
1983
|
26 |
8 |
p. 801-803
3 p.
|
artikel
|
| 11 |
Low-intensity differential photocapacitance of MOS structures
|
Mohan Chandra, M.
|
|
1983
|
26 |
8 |
p. 731-737
7 p.
|
artikel
|
| 12 |
Noise measurements in ion implanted mosfets
|
Park, H.S.
|
|
1983
|
26 |
8 |
p. 747-751
5 p.
|
artikel
|
| 13 |
On electrical transport in non-isothermal semi-conductors
|
Dorkel, J.M.
|
|
1983
|
26 |
8 |
p. 819-821
3 p.
|
artikel
|
| 14 |
Photovoltaic properties of sputtered n-CdO films on p-Cu2O
|
Papadimitriou, L.
|
|
1983
|
26 |
8 |
p. 767-769
3 p.
|
artikel
|
| 15 |
Planar, ion-implanted bipolar devices in GaAs
|
Vaidyanathan, K.V.
|
|
1983
|
26 |
8 |
p. 717-721
5 p.
|
artikel
|
| 16 |
Properties of metal semiconductor contacts—I voltage-current characteristics of contacts on intrinsic semiconductors
|
Manifacier, J.-C.
|
|
1983
|
26 |
8 |
p. 795-799
5 p.
|
artikel
|
| 17 |
Rapid interface parameterization using a single MOS conductance curve
|
Brews, J.R.
|
|
1983
|
26 |
8 |
p. 711-716
6 p.
|
artikel
|
| 18 |
Schottky barriers on single-crystal indium telluride
|
Sen, S.
|
|
1983
|
26 |
8 |
p. 757-759
3 p.
|
artikel
|
| 19 |
Simple formulas for analysis of C-V characteristics of MIS capacitor
|
Jakubowski, Andrzej
|
|
1983
|
26 |
8 |
p. 755-756
2 p.
|
artikel
|
| 20 |
Solid-St. Electron.
|
|
|
1983
|
26 |
8 |
p. 823-
1 p.
|
artikel
|
| 21 |
Solubility of GaAs in AuGe eutectic melts
|
Stanchina, William E.
|
|
1983
|
26 |
8 |
p. 817-819
3 p.
|
artikel
|
| 22 |
Time degradation of metal/CdF2 schottky diodes
|
Singh, A.
|
|
1983
|
26 |
8 |
p. 815-817
3 p.
|
artikel
|
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