| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new computer-aided simulation model for polycrystalline silicon film resistors
|
Ching-Yuan Wu,
|
|
1983
|
26 |
7 |
p. 675-684
10 p.
|
artikel
|
| 2 |
A solar cell with enhanced photocurrent
|
Källbäck, Bengt
|
|
1983
|
26 |
7 |
p. 653-656
4 p.
|
artikel
|
| 3 |
Carrier recombination at dislocations in epitaxial gallium phosphide layers
|
Dimitriadis, C.A.
|
|
1983
|
26 |
7 |
p. 633-637
5 p.
|
artikel
|
| 4 |
Constant voltage scaling of FETs for high frequency and high power applications
|
Chi, J.Y.
|
|
1983
|
26 |
7 |
p. 667-670
4 p.
|
artikel
|
| 5 |
Effects of velocity overshoot on performance of GaAs devices, with design information
|
Buot, F.A.
|
|
1983
|
26 |
7 |
p. 617-632
16 p.
|
artikel
|
| 6 |
Electrical measurements on ion-implanted LPCVD polycrystalline silicon films
|
Huang, Ruey-Shing
|
|
1983
|
26 |
7 |
p. 657-665
9 p.
|
artikel
|
| 7 |
Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p +-nGaAs diodes
|
Brudnyi, V.N.
|
|
1983
|
26 |
7 |
p. 699-703
5 p.
|
artikel
|
| 8 |
Evidence of optical generation of minority carriers from saturated MOS transistors
|
Childs, P.A.
|
|
1983
|
26 |
7 |
p. 685-688
4 p.
|
artikel
|
| 9 |
1/f noise as a reliability estimation for solar cells
|
Vandamme, L.K.J.
|
|
1983
|
26 |
7 |
p. 671-674
4 p.
|
artikel
|
| 10 |
Fourier-transformation analysis of deep level transient signals in semiconductors
|
Okuyama, Masanori
|
|
1983
|
26 |
7 |
p. 689-694
6 p.
|
artikel
|
| 11 |
Generalized theory of conduction in schottky barriers
|
Simmons, J.G.
|
|
1983
|
26 |
7 |
p. 705-709
5 p.
|
artikel
|
| 12 |
Induced-gate thermal noise in high electron mobility transistors
|
Wu, E.N.
|
|
1983
|
26 |
7 |
p. 639-642
4 p.
|
artikel
|
| 13 |
Modified theory of MISS, MIST and OMIST devices
|
Zólomy, I.
|
|
1983
|
26 |
7 |
p. 643-651
9 p.
|
artikel
|
| 14 |
Rapid measurement of lifetime using a ramped mos capacitor transient
|
Tiwari, P.
|
|
1983
|
26 |
7 |
p. 695-698
4 p.
|
artikel
|
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