| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A correlation of atomic and electrical measurements of Cr and residual donors in thermally processed semi-insulating GaAs
|
Vasudev, P.K.
|
|
1983
|
26 |
6 |
p. 565-567
3 p.
|
artikel
|
| 2 |
Carrier recombination and lifetime in highly doped silicon
|
Fossum, J.G.
|
|
1983
|
26 |
6 |
p. 569-576
8 p.
|
artikel
|
| 3 |
Carrier recombination at grain boundaries and the effective recombination velocity
|
Hwang, W.
|
|
1983
|
26 |
6 |
p. 599-603
5 p.
|
artikel
|
| 4 |
Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer
|
Morante, J.R.
|
|
1983
|
26 |
6 |
p. 537-538
2 p.
|
artikel
|
| 5 |
Current transport across a grain boundary in polycrystalline semiconductors
|
Lu, Chih-Yuan
|
|
1983
|
26 |
6 |
p. 549-557
9 p.
|
artikel
|
| 6 |
Effect of the electron temperature on the gate-induced charge in small size mos transistors
|
Leburton, J.P.
|
|
1983
|
26 |
6 |
p. 611-615
5 p.
|
artikel
|
| 7 |
Harmonic distortion in a one-dimensional p-n-p transistor
|
Machek, J.
|
|
1983
|
26 |
6 |
p. 525-536
12 p.
|
artikel
|
| 8 |
Hot electron conduction of PbTe and Pb1−xSnxTe
|
Krotkus, A.
|
|
1983
|
26 |
6 |
p. 605-609
5 p.
|
artikel
|
| 9 |
Ion-implantation associated defect production in silicon
|
Troxell, J.R.
|
|
1983
|
26 |
6 |
p. 539-548
10 p.
|
artikel
|
| 10 |
Microscopic investigations of semiconductor interfaces
|
Margaritondo, G.
|
|
1983
|
26 |
6 |
p. 499-513
15 p.
|
artikel
|
| 11 |
Minority carrier recombination in heavily-doped silicon
|
Tyagi, M.S.
|
|
1983
|
26 |
6 |
p. 577-597
21 p.
|
artikel
|
| 12 |
Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts
|
Wada, Yoshinori
|
|
1983
|
26 |
6 |
p. 559-564
6 p.
|
artikel
|
| 13 |
The effect of built-in drift field and emitter recombinations on FCVD of a p-n junction diode
|
Jain, S.C.
|
|
1983
|
26 |
6 |
p. 515-523
9 p.
|
artikel
|
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