| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Above-ambient temperature control using a thermoelectric heat pump
|
Goldsmid, H.J.
|
|
1983
|
26 |
4 |
p. 365-366
2 p.
|
artikel
|
| 2 |
Analysis of a non-uniformly doped MPN silicon Schottky barrier solar cell
|
Roy, S.B.
|
|
1983
|
26 |
4 |
p. 353-359
7 p.
|
artikel
|
| 3 |
Anomalous behaviour in pulsed MOS capacitors and gated diodes due to localised defects
|
Rabbani, K.S.
|
|
1983
|
26 |
4 |
p. 366-368
3 p.
|
artikel
|
| 4 |
A small geometry MOSFET model for CAD applications
|
Guebels, P.P.
|
|
1983
|
26 |
4 |
p. 267-273
7 p.
|
artikel
|
| 5 |
Capless annealing of silicon implanted gallium arsenide
|
Grange, J.D.
|
|
1983
|
26 |
4 |
p. 313-317
5 p.
|
artikel
|
| 6 |
Delay times in Si MOSFETS in the 4.2–400 K temperature range
|
Kamgar, Avid
|
|
1983
|
26 |
4 |
p. 291-294
4 p.
|
artikel
|
| 7 |
Effect of high field stresses on interface states of n-MOS capacitors
|
Jourdain, M.
|
|
1983
|
26 |
4 |
p. 251-257
7 p.
|
artikel
|
| 8 |
Erratum
|
|
|
1983
|
26 |
4 |
p. 369-
1 p.
|
artikel
|
| 9 |
Noise in two-port devices with a negative input or output conductance
|
Van der ziel, A.
|
|
1983
|
26 |
4 |
p. 333-334
2 p.
|
artikel
|
| 10 |
Numerical modeling of power mosfets
|
Navon, D.H.
|
|
1983
|
26 |
4 |
p. 287-290
4 p.
|
artikel
|
| 11 |
On threshold and flat-band voltages for MOS devices with polysilicon gate and nonuniformly doped substrate
|
Marshak, Alan H.
|
|
1983
|
26 |
4 |
p. 361-364
4 p.
|
artikel
|
| 12 |
Poly I2L with deposited polysilicon collector
|
Elsaid, Mohamed H.
|
|
1983
|
26 |
4 |
p. 281-286
6 p.
|
artikel
|
| 13 |
Properties of the contact on ion cleaned n and p type silicon surfaces
|
Vieujot-Testemale, E.
|
|
1983
|
26 |
4 |
p. 325-331
7 p.
|
artikel
|
| 14 |
Radiation effects on thin-oxide MOS capacitors caused by electron beam evaporation of aluminum
|
Hamasaki, M.
|
|
1983
|
26 |
4 |
p. 299-303
5 p.
|
artikel
|
| 15 |
Replacing the depletion approximation
|
Warner Jr., R.M.
|
|
1983
|
26 |
4 |
p. 335-342
8 p.
|
artikel
|
| 16 |
Schottky rectifiers on silicon using high barriers
|
Stolt, L.
|
|
1983
|
26 |
4 |
p. 295-297
3 p.
|
artikel
|
| 17 |
SiSiO2 interface states based on optically activated conductance technique
|
Singh, R.J.
|
|
1983
|
26 |
4 |
p. 319-323
5 p.
|
artikel
|
| 18 |
The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of aging
|
Marlow, Gregory S.
|
|
1983
|
26 |
4 |
p. 259-266
8 p.
|
artikel
|
| 19 |
The complete doping profile using MOS CV technique
|
Lin, Shi-Tron
|
|
1983
|
26 |
4 |
p. 343-351
9 p.
|
artikel
|
| 20 |
The ƒT Characteristics of epitaxial NPN Transistors in upward operation
|
Kwan, K.W.
|
|
1983
|
26 |
4 |
p. 305-312
8 p.
|
artikel
|
| 21 |
Two-dimensional numerical simulation of bipolar semiconductor devices taking into account heavy doping effects and Fermi statistics
|
Polsky, B.S.
|
|
1983
|
26 |
4 |
p. 275-279
5 p.
|
artikel
|
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