| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A constant-current charging technique for the measurement of generation rates in MOS-capacitors
|
Heasell, E.L.
|
|
1983
|
26 |
3 |
p. 199-209
11 p.
|
artikel
|
| 2 |
Analytical solutions for avalanche-breakdown voltages of single-diffused gaussian junctions
|
Shenai, K.
|
|
1983
|
26 |
3 |
p. 211-216
6 p.
|
artikel
|
| 3 |
An investigation of recombination in gold-doped pin rectifiers
|
Cooper, R.W.
|
|
1983
|
26 |
3 |
p. 217-226
10 p.
|
artikel
|
| 4 |
Calculation of velocity overshoot, velocity autocorrelation and hot electron noise in semiconductors from the small signal microwave mobility
|
Chatterjee, A.
|
|
1983
|
26 |
3 |
p. 227-231
5 p.
|
artikel
|
| 5 |
Characterisation of electrical and optical base controlled switching in the V-groove isolated punch through mode mist
|
Calligaro, R.B.
|
|
1983
|
26 |
3 |
p. 169-178
10 p.
|
artikel
|
| 6 |
Donor generation in monocrystalline silicon by halogen implantation
|
Greeuw, G.
|
|
1983
|
26 |
3 |
p. 241-246
6 p.
|
artikel
|
| 7 |
Effect of heat treatment on the bulk diffusion length of EFG ribbon silicon
|
Ho, C.T.
|
|
1983
|
26 |
3 |
p. 247-250
4 p.
|
artikel
|
| 8 |
Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
|
Piotrowska, A.
|
|
1983
|
26 |
3 |
p. 179-197
19 p.
|
artikel
|
| 9 |
On the physics and modeling of small semiconductor devices—IV. Generalized, retarded transport in ensemble Monte Carlo techniques
|
Zimmermann, J.
|
|
1983
|
26 |
3 |
p. 233-239
7 p.
|
artikel
|
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