| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of metal/sputtered CdTe/n-GaAs diode structures
|
Das, M.B.
|
|
1983
|
26 |
2 |
p. 91-95
5 p.
|
artikel
|
| 2 |
Defect levels in chromium-doped silicon
|
Kunio Jr., Takemitsu
|
|
1983
|
26 |
2 |
p. 155-160
6 p.
|
artikel
|
| 3 |
Dependence of electronic properties of polysilicon grain size and intragrain defects
|
Mathian, G.
|
|
1983
|
26 |
2 |
p. 131-141
11 p.
|
artikel
|
| 4 |
Diode laser fabrication using proton bombardment of PbTe
|
Staudte, D.M.
|
|
1983
|
26 |
2 |
p. 83-90
8 p.
|
artikel
|
| 5 |
Direct correlation of generation lifetimes obtained from pulsed MOS capacitance and gated diode measurements
|
Rabbani, K.S.
|
|
1983
|
26 |
2 |
p. 161-168
8 p.
|
artikel
|
| 6 |
Electroplating used for ohmic contacts
|
Wehmann, H.H.
|
|
1983
|
26 |
2 |
p. 149-153
5 p.
|
artikel
|
| 7 |
Ion-cleaning damage in (100) GaAs, and its effect on schottky diodes
|
Kwan, P.
|
|
1983
|
26 |
2 |
p. 125-129
5 p.
|
artikel
|
| 8 |
Morphology of copper precipitates characterizing lattice imperfection in EFG ribbon silicon
|
Shimokawa, Ryuichi
|
|
1983
|
26 |
2 |
p. 97-108
12 p.
|
artikel
|
| 9 |
Noise phenomena associated with dislocations in bipolar transistors
|
Mihaila, Mihai
|
|
1983
|
26 |
2 |
p. 109-113
5 p.
|
artikel
|
| 10 |
Numerical modeling of looped C-V Characteristics in Ap + n junction containing mid-bandgap electron traps
|
Nozaki, S.
|
|
1983
|
26 |
2 |
p. 115-123
9 p.
|
artikel
|
| 11 |
Simplified long-channel MOSFET theory
|
Pierret, R.F.
|
|
1983
|
26 |
2 |
p. 143-147
5 p.
|
artikel
|
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