| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A transient Poole-Frenkel effect at the semiconductor surface of MAOS devices
|
Kliem, H.
|
|
1983
|
26 |
12 |
p. 1183-1188
6 p.
|
artikel
|
| 2 |
Carrier density distribution in modulation doped GaAs-Al x Ga1−x As quantum well heterostructures
|
Hsieh, T.C.
|
|
1983
|
26 |
12 |
p. 1173-1176
4 p.
|
artikel
|
| 3 |
Fifteenth annual Pittsburgh conference on modeling and simulation April 19–20, 1984
|
|
|
1983
|
26 |
12 |
p. 1193-
1 p.
|
artikel
|
| 4 |
Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
|
Bennett, Herbert S.
|
|
1983
|
26 |
12 |
p. 1157-1166
10 p.
|
artikel
|
| 5 |
Improving the reverse recovery of power mosfet integral diodes by electron irradiation
|
Jayant Baliga, B.
|
|
1983
|
26 |
12 |
p. 1133-1141
9 p.
|
artikel
|
| 6 |
Junction between amorphous germanium and monocrystal n p Si
|
Sinha, N.P.
|
|
1983
|
26 |
12 |
p. 1177-1180
4 p.
|
artikel
|
| 7 |
List of contents and author index
|
|
|
1983
|
26 |
12 |
p. i-xi
nvt p.
|
artikel
|
| 8 |
On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers
|
Van Meirhaeghe, R.L.
|
|
1983
|
26 |
12 |
p. 1189-1192
4 p.
|
artikel
|
| 9 |
Photoionization of impurity atoms in semiconductors in the presence of an applied electric field
|
Coon, D.D.
|
|
1983
|
26 |
12 |
p. 1151-1155
5 p.
|
artikel
|
| 10 |
Rise time of silicon p-n-p photodiodes
|
Djuríc, Zoran
|
|
1983
|
26 |
12 |
p. 1143-1149
7 p.
|
artikel
|
| 11 |
The exact calculation of the electric field and potential at the metallurgical boundary of abrupt n 1−n 2 homojunctions
|
Schmidt, Pierre E.
|
|
1983
|
26 |
12 |
p. 1181-1182
2 p.
|
artikel
|
| 12 |
Theory of the growth of SiO2 in an oxygen plasma
|
Kiermasz, A.
|
|
1983
|
26 |
12 |
p. 1167-1172
6 p.
|
artikel
|
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