| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate interface handling for mathematical simulation of MOS devices
|
Szuhar, M.
|
|
1982
|
25 |
9 |
p. 963-965
3 p.
|
artikel
|
| 2 |
Analysis of admittance spectroscopy method for the study of deep levels
|
Derdouri, M.
|
|
1982
|
25 |
9 |
p. 925-931
7 p.
|
artikel
|
| 3 |
Band gap narrowing in heavily doped silicon
|
Dhariwal, S.R.
|
|
1982
|
25 |
9 |
p. 909-911
3 p.
|
artikel
|
| 4 |
Characterization of horizontal Bridgman-grown semi-insulating GaAs for ion implantation
|
Mizutani, Takashi
|
|
1982
|
25 |
9 |
p. 885-891
7 p.
|
artikel
|
| 5 |
Charge accumulation and mobility in thin dielectric MOS transistors
|
Sodini, C.G.
|
|
1982
|
25 |
9 |
p. 833-841
9 p.
|
artikel
|
| 6 |
Comment on Hill and Coleman's single high frequency approximation for interface state density determination
|
Singh, J.P.
|
|
1982
|
25 |
9 |
p. 967-968
2 p.
|
artikel
|
| 7 |
Distribution profiles of diffused layers in silicon
|
Arora, N.D.
|
|
1982
|
25 |
9 |
p. 965-967
3 p.
|
artikel
|
| 8 |
Effect of reactive sputter etching of SiO2 on the properties of subsequently formed MOS systems
|
Niggerbrügge, U.
|
|
1982
|
25 |
9 |
p. 859-868
10 p.
|
artikel
|
| 9 |
Erratum
|
|
|
1982
|
25 |
9 |
p. 971-
1 p.
|
artikel
|
| 10 |
Interpretation of flatband voltage shifts in terms of charge distributions in MNOS structures
|
Bernt, H.
|
|
1982
|
25 |
9 |
p. 843-850
8 p.
|
artikel
|
| 11 |
Junction structure effects on constant capacitance DLTS and ODLTS spectra
|
Whight, K.R.
|
|
1982
|
25 |
9 |
p. 893-901
9 p.
|
artikel
|
| 12 |
Measurements of the thickness of thin oxide films and thin nitride films on silicon by infra-red absorption
|
Boal, J.V.
|
|
1982
|
25 |
9 |
p. 968-970
3 p.
|
artikel
|
| 13 |
Non-homogeneous electrical transport through silicon-on-sapphire thin films: Evidence of the internal stress influence
|
Lee, Jong-Hyun
|
|
1982
|
25 |
9 |
p. 947-953
7 p.
|
artikel
|
| 14 |
On the flat fermi level approximation in the space charge layer of induced-junction solar cells
|
De Visschere, Patrick
|
|
1982
|
25 |
9 |
p. 955-957
3 p.
|
artikel
|
| 15 |
On the theory of the thermionic emission transistor II. TET as an element of logic circuits
|
Luryi, Serge
|
|
1982
|
25 |
9 |
p. 933-942
10 p.
|
artikel
|
| 16 |
Optimum baritt structure
|
Luryi, S.
|
|
1982
|
25 |
9 |
p. 943-945
3 p.
|
artikel
|
| 17 |
Oxidation of glow discharge a-Si:H
|
Ponpon, J.P.
|
|
1982
|
25 |
9 |
p. 875-876
2 p.
|
artikel
|
| 18 |
Photovoltaic processes in metal-semicrystalline silicon Schottky barriers and implications for grating solar cells
|
de Groot, A.W.
|
|
1982
|
25 |
9 |
p. 917-923
7 p.
|
artikel
|
| 19 |
Reduction of solar cell efficiency by edge defects across the back-surface-field junction:— A developed perimeter model
|
Sah, C.T.
|
|
1982
|
25 |
9 |
p. 851-858
8 p.
|
artikel
|
| 20 |
Theoretical analysis of a metal p-n Schottky barrier solar cell
|
Srinivasa Rao, P.
|
|
1982
|
25 |
9 |
p. 959-960
2 p.
|
artikel
|
| 21 |
Theory of open circuit voltage decay in a p-n junction diode at high injection
|
Tewary, V.K.
|
|
1982
|
25 |
9 |
p. 903-907
5 p.
|
artikel
|
| 22 |
Theory of Schottky barrier heights of amorphous MIS solar cells
|
Juh Tzeng Lue,
|
|
1982
|
25 |
9 |
p. 869-874
6 p.
|
artikel
|
| 23 |
The spreading resistance of a homogeneous slab on a high-resistivity substrate: Mixed boundary value solutions
|
Leong, M.S.
|
|
1982
|
25 |
9 |
p. 877-884
8 p.
|
artikel
|
| 24 |
Thickness dependences of solar cell performance
|
Sah, C.T.
|
|
1982
|
25 |
9 |
p. 960-962
3 p.
|
artikel
|
| 25 |
Two-dimensional device simulator for gate level characterization
|
Tomizawa, Masaaki
|
|
1982
|
25 |
9 |
p. 913-916
4 p.
|
artikel
|
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