| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A calculation of the capacitance-voltage characteristics of p+-InP/n-InP/n-InGaAsP photodiodes
|
Donnelly, J.P.
|
|
1982
|
25 |
7 |
p. 669-677
9 p.
|
artikel
|
| 2 |
A new form of two-state switching device, using a bulk semiconductor barrier
|
Board, K.
|
|
1982
|
25 |
7 |
p. 571-575
5 p.
|
artikel
|
| 3 |
Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon
|
Wu, R.H.
|
|
1982
|
25 |
7 |
p. 643-649
7 p.
|
artikel
|
| 4 |
Comment on noise in transferred electron amplifiers
|
Handel, P.H.
|
|
1982
|
25 |
7 |
p. 541-542
2 p.
|
artikel
|
| 5 |
Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells
|
Wu, Ching-Yuan
|
|
1982
|
25 |
7 |
p. 679-682
4 p.
|
artikel
|
| 6 |
Electron beam induced current (EBIC) as a function of the angle of incidence of the electron beam in a scanning electron microscope (SEM)
|
Jakubowicz, A.
|
|
1982
|
25 |
7 |
p. 651-653
3 p.
|
artikel
|
| 7 |
Electron drift velocity in GaAs using a variable frequency microwave time-of-flight technique
|
Hill, G.
|
|
1982
|
25 |
7 |
p. 589-597
9 p.
|
artikel
|
| 8 |
Interpretation of profiles obtained by C(V) technique in presence of deep traps: Application to proton irradiated GaAs samples
|
Loualiche, S.
|
|
1982
|
25 |
7 |
p. 577-582
6 p.
|
artikel
|
| 9 |
Limitations on the range of measurements of sheet resistivity of shallow diffused layers for profiling by the four-point-probe technique
|
Eranna, G.
|
|
1982
|
25 |
7 |
p. 611-614
4 p.
|
artikel
|
| 10 |
Models for ohmic contacts on graded crystalline or amorphous heterojunctions
|
Sebestyen, T.
|
|
1982
|
25 |
7 |
p. 543-550
8 p.
|
artikel
|
| 11 |
Recombination mechanism in heavily doped silicon
|
Haug, A.
|
|
1982
|
25 |
7 |
p. 665-667
3 p.
|
artikel
|
| 12 |
Resonant tunnel switching in MISS devices
|
Millán, J.
|
|
1982
|
25 |
7 |
p. 565-569
5 p.
|
artikel
|
| 13 |
Simple method for accurately determining the injection efficiency and bulk quantum efficiency of light-emitting diodes
|
van Opdorp, C.
|
|
1982
|
25 |
7 |
p. 599-610
12 p.
|
artikel
|
| 14 |
Small-signal conductance vs temperature: A rapid means of determining the nature of current transport in high-doped n-GaAs Schottky barrier diodes
|
Sriram, S.
|
|
1982
|
25 |
7 |
p. 615-619
5 p.
|
artikel
|
| 15 |
Subthreshold behavior of silicon MOSFETs at 4.2 K
|
Kamgar, Avid
|
|
1982
|
25 |
7 |
p. 537-539
3 p.
|
artikel
|
| 16 |
The di/dt capability of field-controlled thyristors
|
Baliga, B.Jayant
|
|
1982
|
25 |
7 |
p. 583-588
6 p.
|
artikel
|
| 17 |
The effects of surface treatments on the Pt/n-GaAs Schottky interface
|
Aydinli, Atilla
|
|
1982
|
25 |
7 |
p. 551-558
8 p.
|
artikel
|
| 18 |
The recrystalization of BF2 +-implanted silicon by light-flash annealing
|
Leu, Juh-Tzeng
|
|
1982
|
25 |
7 |
p. 559-563
5 p.
|
artikel
|
| 19 |
Threshold voltage models of short, narrow and small geometry MOSFET's: A review
|
Akers, L.A.
|
|
1982
|
25 |
7 |
p. 621-641
21 p.
|
artikel
|
| 20 |
Transverse electric field effects on the electron transport properties of InP
|
Maxfield, N.P.
|
|
1982
|
25 |
7 |
p. 655-663
9 p.
|
artikel
|
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