| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple method for modeling VLSI yields
|
Stapper, C.H.
|
|
1982
|
25 |
6 |
p. 487-489
3 p.
|
artikel
|
| 2 |
A study of deep metal-related centres in germanium by capacitance spectroscopy
|
Pearton, S.J.
|
|
1982
|
25 |
6 |
p. 499-503
5 p.
|
artikel
|
| 3 |
Computer studies of the effect of electron and hole current multiplication factors on the d.c. and microwave properties of symmetrical Si DDR IMPATT devices
|
Sridharan, M.
|
|
1982
|
25 |
6 |
p. 493-497
5 p.
|
artikel
|
| 4 |
Diffusion of zinc into ion-implanted gallium arsenide
|
Houghton, A.J.N.
|
|
1982
|
25 |
6 |
p. 441-448
8 p.
|
artikel
|
| 5 |
Effect of oxidation-induced positive charges on the kinetics of silicon oxidation
|
Hamasaki, M.
|
|
1982
|
25 |
6 |
p. 479-486
8 p.
|
artikel
|
| 6 |
Electrical surface properties of semi-insulating and ion implanted GaAs revealed by thermo-optical acousto-electric voltage method
|
Varahramyan, K.
|
|
1982
|
25 |
6 |
p. 517-524
8 p.
|
artikel
|
| 7 |
Flicker noise in Gunn diodes
|
Peczalski, A.
|
|
1982
|
25 |
6 |
p. 511-515
5 p.
|
artikel
|
| 8 |
Generalised small signal analysis of a DAR (Double Avalanche Region) Impatt diode
|
Datta, D.N.
|
|
1982
|
25 |
6 |
p. 435-439
5 p.
|
artikel
|
| 9 |
Properties of a bulk semiconductor barrier with minority carrier injection
|
Board, K.
|
|
1982
|
25 |
6 |
p. 529-535
7 p.
|
artikel
|
| 10 |
Resonance impact ionization in superlattices
|
Mon, K.K.
|
|
1982
|
25 |
6 |
p. 491-492
2 p.
|
artikel
|
| 11 |
Spectral response of photoconductivity in polycrystalline semiconductors
|
Card, H.C.
|
|
1982
|
25 |
6 |
p. 505-510
6 p.
|
artikel
|
| 12 |
The effect of gate-voltage-dependent mobility on thermal noise in MOSFETs
|
van der Ziel, A.
|
|
1982
|
25 |
6 |
p. 525-527
3 p.
|
artikel
|
| 13 |
Two-dimensional finite element charge-sheet model of a short-channel MOS transistor
|
Wilson, C.L.
|
|
1982
|
25 |
6 |
p. 461-477
17 p.
|
artikel
|
| 14 |
Volatile component loss and contact resistance of metals on GaAs and GaP during annealing
|
Mojzes, I.
|
|
1982
|
25 |
6 |
p. 449-460
12 p.
|
artikel
|
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