| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An IGFET model to describe the influence of nonuniform surface state charge
|
Pásztor, Gyula
|
|
1982
|
25 |
5 |
p. 429-430
2 p.
|
artikel
|
| 2 |
Characteristics of metal/tunnel-oxide/n/p + silicon switching devices—II
|
Faraone, L.
|
|
1982
|
25 |
5 |
p. 335-344
10 p.
|
artikel
|
| 3 |
Comment on the paper entitled, “estimation of the conduction band deformation potential constant in indium phosphide from the temperature variation of drift mobility” by D.K. Hamilton
|
Nag, B.R.
|
|
1982
|
25 |
5 |
p. 432-
1 p.
|
artikel
|
| 4 |
Determination of power semiconductor model parameter values from structure data
|
Williams, B.W.
|
|
1982
|
25 |
5 |
p. 395-410
16 p.
|
artikel
|
| 5 |
Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements
|
Panayotatos, P.
|
|
1982
|
25 |
5 |
p. 417-422
6 p.
|
artikel
|
| 6 |
Dopant density from maximum-minimum capacitance ratio of implanted MOS structures
|
Brews, J.R.
|
|
1982
|
25 |
5 |
p. 375-379
5 p.
|
artikel
|
| 7 |
Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulses
|
Tyagi, M.S.
|
|
1982
|
25 |
5 |
p. 411-415
5 p.
|
artikel
|
| 8 |
Electron trapping in the oxide layer of MIS-type Al Au Ag and Sn-n-type GaAs Schottky barriers
|
Laflère, W.H.
|
|
1982
|
25 |
5 |
p. 389-393
5 p.
|
artikel
|
| 9 |
Forward-bias impedance of GaAs1-xPx LED's
|
Sandoval, F.
|
|
1982
|
25 |
5 |
p. 355-357
3 p.
|
artikel
|
| 10 |
High gain power switching using field controlled thyristors
|
Baliga, B.Jayant
|
|
1982
|
25 |
5 |
p. 345-353
9 p.
|
artikel
|
| 11 |
High-voltage planar junction with a field-limiting ring
|
Yasuda, Seiji
|
|
1982
|
25 |
5 |
p. 423-427
5 p.
|
artikel
|
| 12 |
InP Schottky contacts with increased barrier height
|
Wada, O.
|
|
1982
|
25 |
5 |
p. 381-387
7 p.
|
artikel
|
| 13 |
Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillators
|
Graffeuil, J.
|
|
1982
|
25 |
5 |
p. 367-374
8 p.
|
artikel
|
| 14 |
On the determination of the neutral level and charge density in the interfacial layer of a MIS diode
|
Daw, A.N.
|
|
1982
|
25 |
5 |
p. 431-432
2 p.
|
artikel
|
| 15 |
Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxy
|
Fujita, Shigeo
|
|
1982
|
25 |
5 |
p. 359-365
7 p.
|
artikel
|
| 16 |
Reply to comment on the paper entitled “estimation of the conduction band deformation potential in indium phosphide from the temperature variation of drift mobility”
|
Hamilton, D.K.
|
|
1982
|
25 |
5 |
p. 433-
1 p.
|
artikel
|
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