| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A numerical analysis of bulk-barrier diodes
|
Langer, E.
|
|
1982
|
25 |
4 |
p. 317-324
8 p.
|
artikel
|
| 2 |
Characterisation of the base-diffusivity enhancement factor in a phosphorus-emitter boron-base transistor structure
|
Ward, S.
|
|
1982
|
25 |
4 |
p. 253-259
7 p.
|
artikel
|
| 3 |
Deep metal-related centres in germanium
|
Pearton, S.J.
|
|
1982
|
25 |
4 |
p. 305-311
7 p.
|
artikel
|
| 4 |
Dependence of MOSFET noise parameters in n-channel MOSFETs on oxide thickness
|
Park, H.S.
|
|
1982
|
25 |
4 |
p. 313-315
3 p.
|
artikel
|
| 5 |
Electron trap behaviour in Te-doped GaAs0.6P0.4
|
Henning, I.D.
|
|
1982
|
25 |
4 |
p. 325-333
9 p.
|
artikel
|
| 6 |
Generation-recombination noise in p-type silicon
|
Bosman, G.
|
|
1982
|
25 |
4 |
p. 273-280
8 p.
|
artikel
|
| 7 |
Injection and doping dependence of SEM and scanning light spot diffusion length measurements in silicon power rectifiers
|
Davidson, S.M.
|
|
1982
|
25 |
4 |
p. 261-272
12 p.
|
artikel
|
| 8 |
Measurement of minority carrier lifetime in GaAs and GaAs1−xPx with an intensity-modulated electron beam
|
Pietzsch, J.
|
|
1982
|
25 |
4 |
p. 295-304
10 p.
|
artikel
|
| 9 |
Photovoltaic effects in Cu2OCu solar cells grown by anodic oxidation
|
Fortin, E.
|
|
1982
|
25 |
4 |
p. 281-283
3 p.
|
artikel
|
| 10 |
Silver Schottky diodes on Kelvin, AES and LEED characterized (100)surfaces of GaAs cleaned by ion bombardment
|
Palau, J.M.
|
|
1982
|
25 |
4 |
p. 285-294
10 p.
|
artikel
|
Tijdschrift beschrijving