| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate JFET/MESFET model for circuit analysis
|
Hartgring, Cornelis D.
|
|
1982
|
25 |
3 |
p. 233-240
8 p.
|
artikel
|
| 2 |
A note on ifβ UP and β DOWN in I2L transistors
|
Wisted, J.M.
|
|
1982
|
25 |
3 |
p. 251-252
2 p.
|
artikel
|
| 3 |
Application of Fletcher-Powell's optimization method to process/device simulation of MOSFET characteristics
|
Yokoyama, Kiyoyuki
|
|
1982
|
25 |
3 |
p. 201-203
3 p.
|
artikel
|
| 4 |
A two-dimensional model of the avalanche effects in MOS transistors
|
Schütz, Alfred
|
|
1982
|
25 |
3 |
p. 177-183
7 p.
|
artikel
|
| 5 |
Characteristics of AuGeNi ohmic contacts to GaAs
|
Heiblum, M.
|
|
1982
|
25 |
3 |
p. 185-195
11 p.
|
artikel
|
| 6 |
Comparison of two 1 f noise models in MOSFETs
|
Park, H.S.
|
|
1982
|
25 |
3 |
p. 213-217
5 p.
|
artikel
|
| 7 |
Determination of energy density distribution and capture cross-section of interface states in the metal-nitride-oxide-semiconductor (MNOS) structure
|
Singh, A.
|
|
1982
|
25 |
3 |
p. 219-226
8 p.
|
artikel
|
| 8 |
Generation kinetics of oxide charges and surface states during oxidation of silicon
|
Hamasaki, M.
|
|
1982
|
25 |
3 |
p. 205-211
7 p.
|
artikel
|
| 9 |
Investigations of interface-state density in SiMOS structures
|
Singh, R.J.
|
|
1982
|
25 |
3 |
p. 227-232
6 p.
|
artikel
|
| 10 |
Minimum value of the low-frequency space-charge capacitance of MOS structures
|
Kokkas, Achilles G.
|
|
1982
|
25 |
3 |
p. 249-251
3 p.
|
artikel
|
| 11 |
Piezoresistance as the source of stress-induced changes of current gain in bipolar transistors
|
Mikoshiba, H.
|
|
1982
|
25 |
3 |
p. 197-199
3 p.
|
artikel
|
| 12 |
Theory of non-equilibrium phenomena in an MIS device under linear voltage ramp bias
|
Allman, P.G.C.
|
|
1982
|
25 |
3 |
p. 241-247
7 p.
|
artikel
|
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