nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of the performance of gold and platinum killed power diodes
|
Brotherton, S.D. |
|
1982 |
25 |
2 |
p. 119-125 7 p. |
artikel |
2 |
Alloy clustering and its effect on impact ionization in ternary III–V compounds
|
Burroughs, M.S. |
|
1982 |
25 |
2 |
p. 161-167 7 p. |
artikel |
3 |
Calculation of the electric field enhancement for a degenerate diffusion process
|
Marshak, Alan H. |
|
1982 |
25 |
2 |
p. 151-153 3 p. |
artikel |
4 |
Effect of double reflection on the forward current-voltage characteristics of a silicon p +-s-n + epitaxial diode
|
Ramanan, S. |
|
1982 |
25 |
2 |
p. 155-159 5 p. |
artikel |
5 |
Effect of the presence of an inversion layer in an MPN structure
|
Roy, S.B. |
|
1982 |
25 |
2 |
p. 169-173 5 p. |
artikel |
6 |
Electrical characteristics and memory behavior of Ge3N4GaAs MIS devices
|
Pande, Krishna P. |
|
1982 |
25 |
2 |
p. 145-149 5 p. |
artikel |
7 |
Investigation of parameter sensitivity of short channel mosfets
|
Selberherr, S. |
|
1982 |
25 |
2 |
p. 85-90 6 p. |
artikel |
8 |
Minority carrier injection and extraction in neutron bombarded germanium
|
Rieder, G. |
|
1982 |
25 |
2 |
p. 133-136 4 p. |
artikel |
9 |
Modeling the transition region of a symmetric step junction
|
Lee, Kwyro |
|
1982 |
25 |
2 |
p. 115-118 4 p. |
artikel |
10 |
New techniques of capacitance-voltage measurements of semiconductor junctions
|
Li, Ming-Fu |
|
1982 |
25 |
2 |
p. 95-99 5 p. |
artikel |
11 |
On the additivity of ohmic and space charge limited currents
|
Dumke, William P. |
|
1982 |
25 |
2 |
p. 101-103 3 p. |
artikel |
12 |
On the width of Schottky barriers
|
Moreau, Yves |
|
1982 |
25 |
2 |
p. 137-139 3 p. |
artikel |
13 |
Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures
|
Saxena, Ashok K. |
|
1982 |
25 |
2 |
p. 127-131 5 p. |
artikel |
14 |
Proposed discrimination between 1/f noise source in transistors
|
van der Ziel, A. |
|
1982 |
25 |
2 |
p. 141-143 3 p. |
artikel |
15 |
Solar cell performance with an inhomogeneous areal distribution but constant number of recombination centers
|
Bell, R.O. |
|
1982 |
25 |
2 |
p. 175-176 2 p. |
artikel |
16 |
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
|
Marlow, Gregory S. |
|
1982 |
25 |
2 |
p. 91-94 4 p. |
artikel |
17 |
The forward biased, Abrupt p-n junction
|
Guckel, Henry |
|
1982 |
25 |
2 |
p. 105-113 9 p. |
artikel |